Light emitting device and electronic equipment including a light reflection layer, an insulation layer, and a plurality of pixel electrodes

ABSTRACT

A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.

This is a Continuation of application Ser. No. 16/057,026 filed on Aug.7, 2018, which in turn is a Continuation of application Ser. No.15/233,424 filed on Aug. 10, 2016, which in turn is a Continuation ofapplication Ser. No. 14/823,656 filed Aug. 11, 2015, which in turn is aDivisional of Application Ser. No. 14/455,566 filed Aug. 8, 2014, whichclaims the benefit of Japanese Application No. 2013-175339 filed Aug.27, 2013. The disclosures of the aforementioned prior applications arehereby incorporated by reference herein in their entirety.

BACKGROUND 1. Technical Field

The present invention relates to a light emitting device, a method ofmanufacturing the light emitting device, and electronic equipment inwhich the light emitting device is mounted.

2. Related Art

As an example of a light emitting device, for example, an electro-opticdevice, in which organic Electroluminescent (hereinafter, referred to asan organic EL) elements are arranged in a matrix shape(JP-A-2009-134067), has been proposed. The electro-optic devicedisclosed in JP-A-2009-134067 is an active matrix type light emittingdevice which includes a thin film transistor and in which pixels foremitting light are arranged in a matrix shape. In the pixels, a lightreflection layer, a translucent insulation film, a first electrode(pixel electrode), a barrier layer, a light emission functional layer,and a second electrode (facing electrode) are sequentially laminated.

A current is supplied to the light emission functional layer from thepixel electrode in an area which is not covered by the barrier layer,and thus the light emission functional layer emits light. That is, anarea which is not covered by the barrier layer (an area in which thebarrier layer is not formed) is a light emission area. Further, thepixel electrode is provided to cover a contact hole, and the pixelelectrode is electrically connected to the thin film transistor throughthe contact hole. That is, a portion, in which the pixel electrode iselectrically connected to the thin film transistor, is a contact area.The pixel electrode is provided over the light emission area and thecontact area.

A translucent insulation film has a function to adjust an opticaldistance between the light reflection layer and the facing electrode,and the film thickness of the translucent insulation film is set suchthat a relationship of the light emission area of a first pixel>thelight emission area of a second pixel>the light emission area of a thirdpixel>a contact hole formation area (contact area), is satisfied.

With the configuration (optical resonance structure), light which isemitted from the light emission functional layer reciprocates betweenthe light reflection layer and the facing electrode, and light of aresonant wavelength according to an optical distance between the lightreflection layer and the facing electrode, that is, the film thicknessof the translucent insulation film, is selectively amplified and emittedfrom each pixel. In the electro-optic device disclosed inJP-A-2009-134067, for example, light of a red wavelength in which a peakwavelength is 610 nm, light of a green wavelength in which a peakwavelength is 540 nm, and light of a blue wavelength in which a peakwavelength is 470 nm, that is, light of a high color purity is emittedfrom each pixel as display light according to the optical resonancestructure, and thus excellent color reproducibility is acquired.

As described above, since the electro-optic device disclosed inJP-A-2009-134067 has a relationship of the film thickness of thetranslucent insulation film in the light emission area>the filmthickness of the translucent insulation film in the contact area, aboundary of a different optical distance (a boundary of a different filmthickness of the translucent insulation film) is formed between thelight emission area and the contact area.

In the electro-optic device disclosed in JP-A-2009-134067, if the lightemission area is enlarged in order to acquire a brighter display, theboundary becomes an obstacle, and thus there is a problem in that it isdifficult to enlarge the light emission area.

Specifically, if the light emission area is enlarged over the boundary,a part in which the optical distance is different is generated in thelight emission area. If the optical distance is different, the resonantwavelength varies, with the result that light of a different resonantwavelength is emitted from the light emission area, and thus the colorpurity of light, which is emitted from the light emission area, isdeteriorated. Therefore, there is a problem in that it is difficult toenlarge the light emission area over the boundary.

SUMMARY

The invention can be realized in the following forms or applicationexamples.

APPLICATION EXAMPLE 1

According to this application example, there is provided a lightemitting device including: a transistor; a light reflection layer whichis provided on an upper side of the transistor; a first insulation layerthat covers the light reflection layer, and includes a first layerthickness part, a second layer thickness part which is thicker than thefirst layer thickness part, and a third layer thickness part which isthicker than the second layer thickness part; a pixel electrode that isprovided on the first insulation layer, and has optical transparency; asecond insulation layer that covers a peripheral section of the pixelelectrode; a light emission functional layer that covers the pixelelectrode and the second insulation layer; a facing electrode thatcovers the light emission functional layer, and has light reflexivityand the optical transparency; and a conductive layer that is provided onthe first layer thickness part, and includes at least a part which issuperimposed on the pixel electrode in a plane view. The pixel electrodeincludes a first pixel electrode which is provided in the first layerthickness part, a second pixel electrode which is provided in the secondlayer thickness part, and a third pixel electrode which is provided inthe third layer thickness part. The first pixel electrode, the secondpixel electrode, and the third pixel electrode are connected to thetransistor through the conductive layer.

The conductive layer is provided on the first layer thickness part, anda signal from the transistor is provided to the pixel electrode throughthe conductive layer. The conductive layer is superimposed on the pixelelectrode in a plane view, and an area in which the conductive layer isprovided is a contact area in which the transistor is connected to thepixel electrode. The peripheral section of the pixel electrode iscovered by the second insulation layer, a current is supplied from thepixel electrode in an area, which is not covered by the secondinsulation layer, to the light emission functional layer according tothe signal from the transistor, and the light emission functional layeremits light. That is, the area, which is not covered by the secondinsulation layer, is a light emission area in which the light emissionfunctional layer emits light. The pixel electrode is provided over thecontact area and the light emission area.

Light, which is emitted from the light emission functional layer (lightemission area), reciprocates between the light reflection layer and thefacing electrode, and resonates according to an optical distance betweenthe light reflection layer and the facing electrode, and thus light,which has a specific wavelength, is amplified. The optical distancevaries according to the layer thicknesses of the first insulation layer.Since the first insulation layer includes three layer thicknesses, lightof three types of resonant wavelengths is emitted. When the layerthicknesses of the first insulation layer are adjusted such that, forexample, light of three types of resonant wavelengths, that is, blue,green, and red, is amplified, it is possible to enhance the color purityof the blue, green and red light which is emitted from the lightemission area.

The first pixel electrode is provided in the first layer thickness part,the second pixel electrode is provided in the second layer thicknesspart, and the third pixel electrode is provided in the third layerthickness part. The layer thicknesses of the first insulation layer inan area in which each pixel electrode is provided is fixed. That is, theoptical distance of an area, in which the pixel electrode is provided,is fixed.

The optical distance of an area, in which the pixel electrode isprovided, is fixed. Therefore, even when a gap between the lightemission area and the contact area of the pixel electrode is reduced andthe light emission area of the pixel electrode is enlarged, the opticaldistance does not vary. In other words, the area, in which the pixelelectrode is provided, includes a boundary of a different opticaldistance in the well-known technique (JP-A-2009-134067). However, theoptical distance is fixed in the area, in which the pixel electrode isprovided, in the invention. Therefore, even when the light emission areais enlarged in the pixel electrode, the variation in the resonantwavelength (deterioration in the color purity) is not generated, andthus it is possible to enlarge the light emission area, compared to thewell-known technique. Accordingly, it is possible to enhance theintensity of light which is emitted from the light emission area withoutdeteriorating the color purity of light which is emitted from the lightemission area. Therefore, in the light emitting device according to theapplication example, it is possible to provide a display with enhancedcolor purity and intensity of light, that is, display with brighter andclearer colors.

APPLICATION EXAMPLE 2

In the light emitting device according to the application example, thefirst insulation layer may include a first insulation film, a secondinsulation film, and a third insulation film which are sequentiallylaminated from a side of the reflection layer, the first insulation filmmay have a first layer thickness, a part, in which the first insulationfilm and the second insulation film are laminated, may have a secondlayer thickness, a part, in which the first insulation film, the secondinsulation film, and the third insulation film are laminated, may have athird layer thickness, the conductive layer may include a firstconductive layer, a second conductive layer, and a third conductivelayer, the first pixel electrode may be directly connected to the firstconductive layer, the second pixel electrode may be connected to thesecond conductive layer through a first contact hole which passesthrough the second insulation film, and the third pixel electrode may beconnected to the third conductive layer through a second contact holewhich passes through the second insulation film and the third insulationfilm.

The first layer thickness part includes the first insulation film, thesecond layer thickness part includes the first insulation film and thesecond insulation film, and the third layer thickness part includes thefirst insulation film, the second insulation film, and the thirdinsulation film. Control is performed such that the first insulationfilm, the second insulation film, and the third insulation film have auniform film thickness, and thus it is possible to enhance theuniformity of the film thickness of the first layer thickness part, thefilm thickness of the second layer thickness part, and the filmthickness of the third layer thickness part. Accordingly, the uniformityof the optical distance of the area, in which the first pixel electrodeis provided, the optical distance of the area, in which the second pixelelectrode is provided, and the optical distance of the area, in whichthe third pixel electrode is provided, is enhanced, the deviation of theresonant wavelength of the light which is emitted from each pixelelectrode is reduced, and thus it is possible to enhance the colorpurity of the light which is emitted from the light emission area ofeach pixel electrode.

APPLICATION EXAMPLE 3

In the light emitting device according to the application example, thefirst pixel electrode may be provided in the first layer thickness part,and the second pixel electrode may be provided in the second layerthickness part.

When the first pixel electrode is arranged within the first layerthickness part, it is possible to emit light, which has the resonantwavelength corresponding to the first layer thickness part, from thelight emission area of the first pixel electrode. When the second pixelelectrode is arranged within the second layer thickness part, it ispossible to emit light, which has the resonant wavelength correspondingto the second layer thickness part, from the light emission area of thesecond pixel electrode. Accordingly, it is possible to enhance the colorpurity of light which is emitted from the light emission areas of thefirst pixel electrode and the second pixel electrode.

APPLICATION EXAMPLE 4

In the light emitting device according to the application example, thefirst pixel electrode, the second pixel electrode, and the third pixelelectrode may be arranged in parallel in a first direction, and thefirst layer thickness part and the second layer thickness part may beformed in a rectangular shape which is extended in a second directioncrossing the first direction.

The first layer thickness part is arranged with the first pixelelectrode, and emits light of a first resonant wavelength. The secondlayer thickness part is arranged with the second pixel electrode, andemits light of a second resonant wavelength. The third layer thicknesspart is provided with the third pixel electrode, and emits light of athird resonant wavelength. A part which emits light of the firstresonant wavelength, a part which emits light of the second resonantwavelength, and a part which emits light of the third resonantwavelength have a rectangular shape which is extended in the seconddirection. When the part (first layer thickness part) which emits lightof the first resonant wavelength, the part (second layer thickness part)which emits light of the second resonant wavelength, and the part (thirdlayer thickness part) which emits light of the third resonant wavelengthare repeatedly arranged in the first direction crossing the seconddirection, it is possible to form the light emission area (display area)in which parts which emit three types of colors are arranged in a stripeshape.

APPLICATION EXAMPLE 5

In the light emitting device according to the application example, thefirst insulation layer may include a first insulation film and anorganic insulation layer which are sequentially laminated onto a side ofthe light reflection layer, the organic insulation layer may include afirst flat section and a second flat section which is thicker than thefirst flat section, the first insulation film may include a first layerthickness, a part, in which the first insulation film and the first flatsection are laminated, may have a second layer thickness, a part, inwhich the first insulation film and the second flat section arelaminated, may have a third layer thickness, the conductive layer mayinclude a first conductive layer, a second conductive layer, and a thirdconductive layer, the first pixel electrode may be directly connected tothe first conductive layer, the second pixel electrode may be connectedto the second conductive layer through a first contact hole which passesthrough the first flat section, and the third pixel electrode may beconnected to the third conductive layer through a second contact holewhich passes through the second flat section.

Since it is possible to form the organic insulation layer using aninexpensive coating or printing apparatus, it is possible toinexpensively form the organic insulation layer compared to an inorganicinsulation layer (for example, silicon oxide) which is formed using anexpensive plasma CVD apparatus or a sputtering apparatus.

APPLICATION EXAMPLE 6

In the light emitting device according to the application example, theorganic insulation layer may include a first organic insulation film anda second organic insulation film which are formed of a photosensitiveresin material, and the first flat section may include the first organicinsulation film, and the second flat section may include the firstorganic insulation film and the second organic insulation film.

Since it is possible to perform patterning through only aphotolithographic process using a photosensitive resin material in theorganic insulation film, the process is simplified compared to a methodof patterning the inorganic insulation film (for example, silicon oxide)which requires an etching process in addition to the photolithographicprocess, and thus it is possible to enhance productivity.

APPLICATION EXAMPLE 7

According to this Application Example, there is provided a lightemitting device including: a first transistor; a second transistor; athird transistor; a light reflection layer that is provided on uppersides of the first transistor, the second transistor, and the thirdtransistor; a first insulation layer that covers the light reflectionlayer, and includes a first layer thickness part, a second layerthickness part which is thicker than the first layer thickness part, anda third layer thickness part which is thicker than the second layerthickness part; a first pixel electrode that is provided on the firstlayer thickness part; a first relay electrode that is electricallyconnected to the first transistor; a second pixel electrode that isprovided on the second layer thickness part; a second relay electrodethat is electrically connected to the second transistor; a third pixelelectrode that is provided on the third layer thickness part; a thirdrelay electrode that is electrically connected to the third transistor;a facing electrode; and a light emission functional layer that isprovided between the first pixel electrode and the facing electrode,between the second pixel electrode and the facing electrode, and betweenthe third pixel electrode and the facing electrode. The first relayelectrode is connected to the first pixel electrode through a firstconnection part which is provided in the first layer thickness part, thesecond relay electrode is connected to the second pixel electrodethrough a second connection part which is provided in the second layerthickness part, and the third relay electrode is connected to the thirdpixel electrode through a third connection part which is provided in thethird layer thickness part.

Thereby, it is possible to reduce the gap between the light emissionarea and the contact area of the pixel electrode, and to enlarge thelight emission area of the pixel electrode. Accordingly, in the lightemitting device according to the application example, it is possible toprovide a display with enhanced color purity and intensity of light,that is, a display with brighter and clearer colors.

APPLICATION EXAMPLE 8

In the light emitting device according to the application example, thelight emitting device may further include: a second insulation layerthat defines a first light emission area on the first pixel electrode,defines a second light emission area on the second pixel electrode, anddefines a third light emission area on the third pixel electrode. Thefirst light emission area may be provided on the first layer thicknesspart, the second light emission area may be provided on the second layerthickness part, and the third light emission area may be provided on thethird layer thickness part.

APPLICATION EXAMPLE 9

In the light emitting device according to the application example, thefirst layer thickness part may be provided to reach the first connectionpart from the first light emission area, the second layer thickness partmay be provided to reach the second connection part from the secondlight emission area, and the third layer thickness part may be providedto reach the third connection part from the third light emission area.

APPLICATION EXAMPLE 10

The light emitting device according to the application example mayfurther include a fourth light emission area, and the second layerthickness part may be provided over the second light emission area andthe fourth light emission area.

APPLICATION EXAMPLE 11

In the light emitting device according to the application example, thefirst layer thickness part may be provided to surround the firstconnection part, the second layer thickness part may be provided tosurround the second connection part, and the third layer thickness partmay be provided to surround the third connection part.

APPLICATION EXAMPLE 12

In the light emitting device according to the application example, thefirst insulation layer may include a first insulation film, a secondinsulation film, and a third insulation film which are sequentiallylaminated from a side of the reflection layer, the first connection partmay include a first conductive layer which is connected to the firstrelay electrode through a first contact hole which passes through thefirst insulation film, and is connected to the first pixel electrode,the second connection part may include a second conductive layer whichis connected to the second relay electrode through a second contact holewhich passes through the first insulation film, and is connected to thesecond pixel electrode through a third contact hole which passes throughthe second insulation film, and the third connection part may include athird conductive layer which is connected to the third relay electrodethrough a fourth contact hole which passes through the first insulationfilm, and is connected to the third pixel electrode through a fifthcontact hole which passes through the second insulation film and thethird insulation film.

APPLICATION EXAMPLE 13

The light emitting device according to the application example mayfurther include: a fourth transistor; a fourth pixel electrode that isprovided on the second layer thickness part; and a fourth relayelectrode that is electrically connected to the fourth transistor. Thefourth relay electrode may be connected to the fourth pixel electrodethrough a fourth connection part which is provided in the second layerthickness part, and the first insulation film and the second insulationfilm may be provided to be buried between the second connection part andthe fourth connection part.

APPLICATION EXAMPLE 14

According to this application example, there is provided electronicequipment including the light emitting device according to theapplication examples.

Since the electronic equipment according to the application exampleincludes the light emitting device according to the applicationexamples, it is possible to supply a bright and clear display. Forexample, it is possible to apply the light emitting device according tothe application examples to electronic equipment which includes, forexample, a display unit, such as a head mounted display, a head updisplay, an electronic viewfinder of a digital camera, a personaldigital assistant, and a navigator.

APPLICATION EXAMPLE 15

According to this application example, there is provided a method ofmanufacturing a light emitting device, which includes a transistor; alight reflection layer which is provided on an upper side of thetransistor; a first insulation layer that covers the light reflectionlayer, and includes a first layer thickness part, a second layerthickness part, and a third layer thickness part; a pixel electrode thatis provided on the first layer thickness part; a second insulation layerthat covers a peripheral section of the pixel electrode; a lightemission functional layer that covers the pixel electrode and the secondinsulation layer; a facing electrode that covers the light emissionfunctional layer; and a conductive layer that is provided on the firstlayer thickness part, the pixel electrode including a first pixelelectrode which is provided in the first layer thickness part, a secondpixel electrode which is provided in the second layer thickness part,and a third pixel electrode which is provided in the third layerthickness part, and the first pixel electrode, the second pixelelectrode, and the third pixel electrode being connected to thetransistor through the conductive layer, the method including: formingthe light reflection layer; forming a first insulation film to have thefirst layer thickness; forming the conductive layer; forming a secondinsulation film to have the second layer thickness between the firstinsulation film and the second insulation film; forming a thirdinsulation film to have the third layer thickness between the first andsecond insulation films and the third insulation film; patterning thesecond insulation film and the third insulation film, and forming thefirst insulation layer which includes the first layer thickness part,the second layer thickness part, and the third layer thickness part;forming a first contact hole, which exposes a part of the conductivelayer, in the second layer thickness part and a second contact hole,which exposes a part of the conductive layer, in the third layerthickness part; and forming the first pixel electrode, which ispartially superimposed on the conductive layer, in the first layerthickness part, the second pixel electrode, which covers the firstcontact hole, in the second layer thickness part, and the third pixelelectrode, which covers the second contact hole, in the third layerthickness part.

The light emitting device which is manufactured using the manufacturingmethod according to the application example includes a configuration inwhich the light reflection layer, the first insulation layer, the pixelelectrode, the light emission functional layer, and the facing electrodeare laminated. Light, which is emitted from the light emissionfunctional layer, reciprocates between the light reflection layer andthe facing electrode, resonates according to the optical distancebetween the light reflection layer and the facing electrode, and light,which has a specific wavelength, is amplified. The optical distancevaries according to the layer thicknesses of the first insulation layer.Since the first insulation layer is formed to have three layerthicknesses, light of three types of specific wavelengths is emitted.For example, if the first insulation layer is formed such that light ofthree types of wavelengths, that is, blue, green, and red is selectivelyamplified, it is possible to enhance the color purity of the blue,green, and red light which is emitted from the light emission functionallayer.

The first pixel electrode is formed in the first layer thickness part ofthe first insulation layer, the second pixel electrode is formed in thesecond layer thickness part of the first insulation layer, the thirdpixel electrode is formed in the third layer thickness part of the firstinsulation layer, each of the pixel electrodes is connected to theconductive layer, and the signal from the transistor is supplied throughthe conductive layer. Since the optical distance (the layer thicknessesof the first insulation layer) is fixed in the area in which each pixelelectrode is formed, the variation in the resonant wavelength(deterioration of the color purity) is not generated even when the lightemission area of the pixel electrode is enlarged. That is, compared tothe well-known technique (JP-A-2009-134067) in which the area, in whichthe pixel electrode is provided, includes a boundary of differentoptical distance, it is possible to enlarge the light emission areawithout causing the color purity to be deteriorated and it is possibleto enhance the intensity of light which is emitted from the lightemission area. Accordingly, in the light emitting device according tothe application example, it is possible to provide display with enhancedcolor purity and intensity of light, that is, display with brighter andclearer colors.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanyingdrawings, wherein like numbers reference like elements.

FIG. 1 is a schematic plane view illustrating the configuration of anorganic EL apparatus according to a first embodiment.

FIG. 2 is an equivalent circuit diagram illustrating the electricalconfiguration of the organic EL apparatus according to the firstembodiment.

FIG. 3 is a schematic plane view illustrating a characteristic portionof light emitting pixels.

FIG. 4 is a schematic cross-sectional diagram taken along line IV-IV ofFIG. 3.

FIG. 5 is a schematic cross-sectional diagram taken along line V-V ofFIG. 3.

FIG. 6 is a schematic cross-sectional diagram taken along line VI-VI ofFIG. 3.

FIG. 7 is a schematic cross-sectional diagram taken along line VII-VIIof FIG. 3.

FIG. 8 is a schematic cross-sectional diagram taken along line VIII-VIIIof FIG. 3.

FIG. 9 is a process flowchart illustrating a method of manufacturing theorganic EL apparatus.

FIGS. 10A to 10D are schematic cross-sectional diagrams illustratingstates of the organic EL apparatus after each process is performed.

FIGS. 11A to 11D are schematic cross-sectional diagrams illustratingstates of the organic EL apparatus after each process is performed.

FIG. 12 is a schematic cross-sectional diagram illustrating theconfiguration of an organic EL apparatus according to a secondembodiment.

FIG. 13 is a schematic cross-sectional diagram illustrating theconfiguration of the organic EL apparatus according to the secondembodiment.

FIG. 14 is a process flowchart illustrating a method of manufacturingthe organic EL apparatus.

FIGS. 15A to 15C are schematic cross-sectional diagrams illustrating thestates of the organic EL apparatus after each process is performed.

FIGS. 16A to 16C are schematic cross-sectional diagrams illustrating thestates of the organic EL apparatus after each process is performed.

FIG. 17 is a schematic diagram illustrating a head mounted display.

FIG. 18 is a schematic plane view illustrating the configuration of anorganic EL apparatus according to a first modification example.

FIG. 19 is a schematic plane view illustrating the configuration of anorganic EL apparatus according to a second modification example.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, embodiments of the invention will be described withreference to the accompanying drawings. The embodiments illustrate oneaspect of the invention, do not limit the invention, and can bearbitrarily modified within the technical gist of the invention. Inaddition, in each drawing below, each layer and each portion areillustrated in a size which can be recognized in the drawing, and thusthe dimensions of each layer and each portion are made to be differentfrom actual dimensions.

First Embodiment Outline of Organic EL Apparatus

An organic EL apparatus 100 according to the first embodiment is anexample of a light emitting device, and includes an optical resonancestructure in which it is possible to enhance the color purity of displaylight.

First, the outline of the organic EL apparatus 100 according to theembodiment will be described with reference to FIGS. 1 to 3. FIG. 1 is aschematic plane view illustrating the configuration of the organic ELapparatus, FIG. 2 is an equivalent circuit diagram illustrating theelectrical configuration of the organic EL apparatus, and FIG. 3 is aschematic plane view illustrating a characteristic portion of the lightemitting pixels.

Meanwhile, FIG. 3 illustrates components which are necessary to describethe characteristic portion of the light emitting pixels and does notillustrate the other components. In addition, in FIG. 3, two-dot dashedlines show the outlines of the light emitting pixels 20.

As shown in FIG. 1, the organic EL apparatus 100 according to theembodiment includes an element substrate 10 as a substrate, a pluralityof light emitting pixels 20B, 20G, and 20R which are arranged in amatrix shape on the display area E of the element substrate 10, a dataline drive circuit 101 and scan line drive circuits 102, which areperipheral circuits for controlling the drive of the plurality of lightemitting pixels 20B, 20G, and 20R, external connection terminals 103which are electrically connected to external circuits, and the like.

A plurality of external connection terminals 103 are arranged along thefirst side of the element substrate 10. The data line drive circuit 101is provided between the plurality of external connection terminals 103and the display area E. The scan line drive circuits 102 are providedbetween a second side and a third side, which are perpendicular to thefirst side and face each other, and the display area E.

Hereinafter, description will be made in such a way that a directionalong the first side is an X direction and a direction along the othertwo sides (the second side and the third side), which are perpendicularto the first side and face each other, is a Y direction.

Meanwhile, the X direction is an example of a “first direction” in theinvention, and the Y direction is an example of a “second direction” inthe invention.

The organic EL apparatus 100 includes a light emitting pixel 20B inwhich blue color (B) light emission can be acquired, a light emittingpixel 20G in which green color (G) light emission can be acquired, and alight emitting pixel 20R in which red color (R) light emission can beacquired. In the organic EL apparatus 100, the light emitting pixel 20B,the light emitting pixel 20G, and the light emitting pixel 20R which arearranged in the X direction form a display unit P, and full colordisplay is provided.

Further, the light emitting pixel 20B includes a pixel electrode 31B,the light emitting pixel 20G includes a pixel electrode 31G, and thelight emitting pixel 20R includes a pixel electrode 31R. Each of thelight emitting pixel 20B (pixel electrode 31B), the light emitting pixel20G (pixel electrode 31G), and the light emitting pixel 20R (pixelelectrode 31R) is arranged in parallel in the Y direction.

Meanwhile, the pixel electrode 31B is an example of a “first pixelelectrode” in the invention, the pixel electrode 31G is an example of a“second pixel electrode” in the invention, and the pixel electrode 31Ris an example of a “third pixel electrode” in the invention.

In description below, there is a case in which the light emitting pixelis called the light emitting pixels 20B, 20G, and 20R and the pixelelectrode is called the pixel electrodes 31B, 31G, and 31R, or a case inwhich the pixels and the pixel electrodes are collectively called alight emitting pixel 20 and a pixel electrode 31.

In the Y direction, the light emitting pixels 20, in which the samecolor light emission is acquired, are arranged. That is, the lightemitting pixels 20B, in which blue color (B) light emission is acquired,are arranged in the Y direction and form a rectangular shape (stripeshape). The light emitting pixels 20G, in which green color (G) lightemission is acquired, are arranged in the Y direction and form arectangular shape (stripe shape). The light emitting pixels 20R, inwhich red color (R) light emission is acquired, are arranged in the Ydirection and form a rectangular shape (stripe shape).

In the X direction, the light emitting pixels 20, in which differentcolor light emission is acquired, are repeatedly arranged in the orderof B, G, and R. Meanwhile, the arrangement of the light emitting pixels20 in the X direction may be arranged in the order of, for example, R,G, and B instead of the order of B, G, and R.

The translucent first insulation layer 28 is provided on approximatelythe whole surface of the element substrate 10 except in an area in whichthe external connection terminals 103 are formed.

The translucent first insulation layer 28 includes a first area 28B inwhich the light emitting pixels 20B (pixel electrodes 31B) are arranged,a second area 28G in which the light emitting pixels 20G (pixelelectrodes 31G) are arranged, and a third area 28R in which the lightemitting pixels 20R (pixel electrode 31R) are arranged, and the layerthickness (film thickness) of the first insulation layer 28 differs ineach area. Although description will be made in detail later, the filmthickness of the first insulation layer 28 in the second area 28G islarger than the film thickness of the first insulation layer 28 in thefirst area 28B. The film thickness of the first insulation layer 28 inthe third area 28R is larger than the film thickness of the firstinsulation layer 28 in the second area 28G. That is, the film thicknessof the first insulation layer 28 becomes larger in the order of thefirst area 28B, the second area 28G, and the third area 28R.

The second area 28G is an example of a “first flat section” in theinvention. The third area 28R is an example of a “second flat section”in the invention.

The first area 28B, the second area 28G, and the third area 28R extendin the Y direction and form a rectangular shape (stripe shape).

In the display area E, the dimensions of the first area 28B, the secondarea 28G, and the third area 28R in the X direction are approximatelythe same as the dimension of the light emitting pixel 20 in the Xdirection, that is, approximately the same as a repeating pitch of thelight emitting pixel 20 in the X direction.

In the Y direction, the first area 28B, the second area 28G, and thethird area 28R are wider than the display area E. That is, thedimensions of the first area 28B, the second area 28G, and the thirdarea 28R in the Y direction are larger than the dimension of the displayarea E in the Y direction. Meanwhile, the dimensions of the first area28B, the second area 28G, and the third area 28R in the Y direction maybe the same as the dimension of the display area E in the Y direction,that is, the dimension of an area in which the light emitting pixel 20is arranged.

The first insulation layer 28 is provided in the vicinity of the displayarea E (an area other than the first area 28B, the second area 28G, andthe third area 28R). In the embodiment, the film thickness of the firstinsulation layer 28, which is provided in the vicinity of the displayarea E, is the same as the film thickness of the first insulation layer28 of the third area 28R. Meanwhile, the film thickness of the firstinsulation layer 28, which is provided in the vicinity of the displayarea E, may be the same as the film thickness of the first insulationlayer 28 of the first area 28B or the film thickness of the firstinsulation layer 28 of the second area 28G. Further, the firstinsulation layer 28, which is provided in the vicinity of the displayarea E, may have a different film thickness from those of the firstinsulation layers 28 of the first area 28B, the second area 28G, and thethird area 28R.

Meanwhile, the first area 28B is an example of a “first layer thicknesspart” in the invention, the second area 28G is an example of a “secondlayer thickness part” in the invention, and the third area 28R is anexample of a “third layer thickness part” in the invention.

As shown in FIG. 2, a scan line 11, a data line 12, a lighting controlline 13, and a power line 14 are provided in the element substrate 10 assignal lines corresponding to the light emitting pixel 20. The scan line11 and the lighting control line 13 extend in the X direction inparallel, and are connected to the scan line drive circuits 102 (FIG.1). The data line 12 and the power line 14 extend in the Y direction inparallel. The data line 12 is connected to the data line drive circuit101 (FIG. 1). The power line 14 is connected to any one of the externalconnection terminals 103 which are arranged in plural.

A first transistor 21, a second transistor 22, a third transistor 23, astorage capacitor 24, and an organic EL element 30, which form the pixelcircuit of the light emitting pixel 20, are provided in the vicinity ofthe intersection of the scan line 11 and the data line 12.

The organic EL element 30 includes a pixel electrode 31 which is ananode, a facing electrode 33 which is a cathode, and a light emissionfunctional layer 32 which includes a light emitting layer interposedbetween the electrodes. The facing electrode 33 is a common electrodewhich is provided over the plurality of light emitting pixels 20. Forexample, a reference potential Vss, a potential GND, or the like, whichis lower than a power supply voltage Vdd which is applied to the powerline 14, is applied to the facing electrode 33.

The first transistor 21 and the third transistor 23 are, for example,n-channel type transistors. The second transistor 22 is, for example, ap-channel type transistor.

The first transistor 21 includes a gate electrode which is connected tothe scan line 11, one side current terminal which is connected to thedata line 12, and the other side current terminal which is connected tothe gate electrode of the second transistor 22 and one side electrode ofthe storage capacitor 24.

The second transistor 22 includes the one side current terminal which isconnected to the power line 14 and is connected to the other sideelectrode of the storage capacitor 24. The second transistor 22 includesthe other side current terminal which is connected to the onside currentterminal of the third transistor 23. In other words, the secondtransistor 22 and the third transistor 23 share one current terminal ofa pair of current terminals.

The third transistor 23 includes a gate electrode which is connected tothe lighting control line 13, and the other side current terminal whichis connected to the pixel electrode 31 of the organic EL element 30.

The pair of current terminals in each of the first transistor 21, thesecond transistor 22 and the third transistor 23 includes one side whichis a source and the other side which is a drain.

Meanwhile, the third transistor 23 is an example of a “transistor” inthe invention.

In such a pixel circuit, a voltage level of a scan signal Yi which issupplied from the scan line drive circuits 102 to the scan line 11 is aHigh level, and the n-channel type first transistor 21 becomes in theon-state (ON). The data line 12 is electrically connected to the storagecapacitor 24 through the first transistor 21 which is in the on state(ON). Further, when a data signal is supplied from the data line drivecircuit 101 to the data line 12, a potential difference between avoltage level Vdata of the data signal and the power supply voltage Vddapplied to the power line 14 is stored in the storage capacitor 24.

If the voltage level of the scan signal Yi, which is supplied from thescan line drive circuits 102 to the scan line 11, is a Low level, then-channel type first transistor 21 is in the off-state (OFF), and agate-source voltage Vgs of the second transistor 22 is maintained at avoltage acquired when the voltage level Vdata is applied. In addition,after the scan signal Yi becomes Low level, a voltage level of alighting control signal Vgi, which is supplied to the lighting controlline 13, becomes the high, and the third transistor 23 becomes in theon-state (ON). If so, a current according to the gate-source voltage Vgsof the second transistor 22, that is, a voltage which is maintained inthe storage capacitor 24 is supplied from the power line 14 to theorganic EL element 30 through the second transistor 22 and the thirdtransistor 23.

The organic EL element 30 emits light according to the magnitude of thecurrent which flows through the organic EL element 30. The current whichflows through the organic EL element 30 changes depending on the voltagemaintained in the storage capacitor 24 (potential difference between thevoltage level Vdata of the data line 12 and the power supply voltageVdd) and the length of a period in which the third transistor 23 becomesthe on-state, and thus light emission brightness of the organic ELelement 30 is defined. That is, it is possible to give gradation to thebrightness according to image information in the light emitting pixel 20based on a value of the voltage level Vdata of the data signal.

Meanwhile, in the embodiment, the pixel circuit of the light emittingpixel 20 is not limited to the structure which includes the threetransistors 21, 22, and 23, and may have a structure which includes, forexample, a switching transistor and a driving transistor (structurewhich includes two transistors). In addition, the transistors which formthe pixel circuit may include an n-channel type transistor, a p-channeltype transistor, or both the n-channel type transistor and the p-channeltype transistor. In addition, the transistors which form the pixelcircuit of the light emitting pixel 20 may include a MOS type transistorwhich has an active layer on a semiconductor substrate, a thin filmtransistor, or an electric field effect transistor.

In addition, the arrangement of the lighting control line 13 and thepower line 14, which are signal lines other than the scan line 11 andthe data line 12, depends on the arrangement of the transistors and thestorage capacitor 24 but is not limited thereto.

In the embodiment, the MOS type transistor, which includes an activelayer on the semiconductor substrate, is used as the transistor whichforms the pixel circuit of the light emitting pixel 20.

Characteristic Portion of Light Emitting Pixel

Subsequently, the outline of a characteristic portion of the lightemitting pixel 20 will be described with reference to FIG. 3.

As shown in FIG. 3, the light emitting pixel 20 includes a relayelectrode 106, a pixel electrode 31, and a second insulation layer 29.In the light emitting pixel 20, the relay electrode 106, the pixelelectrode 31, and the second insulation layer 29 are sequentiallylaminated (refer to FIGS. 5 and 6). The second insulation layer 29includes openings 29B, 29G, and 29R which expose a part of the pixelelectrode 31. A light emitting pixel 20B, in which blue color (B) lightemission is acquired, includes a pixel electrode 31B, a relay electrode106B, and the opening 29B. A light emitting pixel 20G, in which greencolor (G) light emission is acquired, includes a pixel electrode 31G, arelay electrode 106G, and the opening 29G. A light emitting pixel 20R,in which red color (R) light emission is acquired, includes a pixelelectrode 31R, a relay electrode 106R, and the opening 29R.

In description below, there is a case in which the relay electrode iscalled the relay electrodes 106B, 106G, and 106R or a case in which therelay electrode is collectively called the relay electrode 106.

Meanwhile, the relay electrode 106 is an example of a “conductive layer”in the invention. The relay electrode 106B is an example of a “firstconductive layer” in the invention, the relay electrode 106G is anexample of a “second conductive layer” in the invention, and the relayelectrode 106R is an example of a “third conductive layer” in theinvention.

Each of the light emitting pixels 20B, 20G, and 20R has a rectangularshape in a plane view, and a longitudinal direction thereof is arrangedalong the Y direction. In the same manner, each of the pixel electrodes31B, 31G, and 31R has a rectangular shape in a plane view, and alongitudinal direction thereof is arranged along the Y direction.

As shown in the same drawing, the relay electrode 106 is arranged alongone short side of the rectangular-shaped light emitting pixel 20, and isprovided such that at least one part thereof is superimposed on thepixel electrode 31 in a plane view. Although description will be made indetail later, the relay electrode 106 is a part of wiring whichelectrically connects the pixel electrode 31 to the third transistor 23.In other words, the pixel electrode 31 is connected to the thirdtransistor 23 through the relay electrode 106. That is, an area in whichthe relay electrode 106 is provided is a contact area.

The second insulation layer 29 covers the peripheral section of thepixel electrode 31 and has a function to electrically insulate adjacentpixel electrodes 31. As described above, the second insulation layer 29includes the openings 29B, 29G, and 29R each of which exposes a part ofthe pixel electrode 31. The pixel electrode 31 corresponding to a partwhich is exposed through the second insulation layer 29, that is, thepixel electrode 31 which is exposed through the openings 29B, 29G, and29R is connected to the light emission functional layer 32, supplies acurrent to the light emission functional layer 32, and causes the lightemission functional layer 32 to emit light. Therefore, the openings 29B,29G, and 29R which are provided in the second insulation layer 29 becomelight emission areas of the light emitting pixels 20B, 20G, and 20R. Inthis manner, the second insulation layer 29 has a function to define thelight emission area of the light emitting pixel 20.

Meanwhile, in the invention, the pixel electrode 31 includes at least anelectrode portion which functions as the electrode of the organic ELelement 30 by connecting to the light emission functional layer 32 inthe light emission area (openings 29B, 29G, and 29R), and a conductiveportion which functions as a conductive layer for connecting theelectrode portion and the relay electrode 106 in a contact area which isconnected to the transistor or the wiring.

Although description will be made in detail later, the light emittingpixel 20 according to the embodiment includes a configuration in whichit is possible to reduce a distance DY between the light emission area(openings 29B, 29G, and 29R) and the contact area (relay electrodes106B, 106G, and 106R). That is, the light emitting pixel 20 includes aconfiguration in which it is possible to enhance the intensity of lightwhich is emitted from the light emission functional layer 32 byenlarging the light emission area (openings 29B, 29G, and 29R). This isthe characteristic portion of the light emitting pixel 20.

Configuration of Cross Section of Light Emitting Pixel

Subsequently, the configuration of a cross section of the light emittingpixel 20 will be described with reference to FIGS. 4 to 8.

FIG. 4 is a schematic cross-sectional diagram taken along line IV-IV ofFIG. 3. That is, FIG. 4 is a schematic cross-sectional diagramillustrating an area, in which openings are provided, in the secondinsulation layer which defines the light emission area. FIG. 5 is aschematic cross-sectional diagram taken along line V-V of FIG. 3. Thatis, FIG. 5 is a schematic cross-sectional diagram illustrating an areain which the pixel electrode is electrically connected to the thirdtransistor. FIG. 6 is a schematic cross-sectional diagram taken alongline VI-VI of FIG. 3. That is, FIG. 6 is a schematic cross-sectionaldiagram illustrating the light emitting pixel in which the red color (R)light emission is acquired. FIG. 7 is a schematic cross-sectionaldiagram taken along line VII-VII of FIG. 3. That is, FIG. 7 is aschematic cross-sectional diagram illustrating the light emitting pixelin which the green color (G) light emission is acquired. FIG. 8 is aschematic cross-sectional diagram taken along line VIII-VIII of FIG. 3.That is, FIG. 8 is a schematic cross-sectional diagram illustrating thelight emitting pixel in which the blue color (B) light emission isacquired.

Meanwhile, FIG. 4 illustrates the first transistor 21, the secondtransistor 22, wirings, which are related to the first transistor 21 andthe second transistor 22, and the like of the pixel circuit, and doesnot illustrate the third transistor 23. FIG. 5 illustrates the thirdtransistor 23, wirings, which are related to the third transistor 23,and the like of the pixel circuit and does not illustrate the firsttransistor 21 and the second transistor 22. In FIGS. 6 to 8, the secondtransistor 22, the third transistor 23, the wirings, which are relatedto the second transistor 22 and the third transistor 23, and the likeare illustrated but the first transistor 21 is not illustrated.

First, a cross-sectional structure of the area, in which the openings29B, 29G, and 29R are provided, in the second insulation layer 29 whichdefines the light emission area, will be described with reference toFIG. 4.

As shown in FIG. 4, the organic EL apparatus 100 includes the elementsubstrate 10, a sealing substrate 70, and a resin layer 71 which isinterposed between the element substrate 10 and the sealing substrate70.

The sealing substrate 70 is a translucent insulation substrate, and aquartz substrate, a glass substrate, or the like can be used as thesealing substrate 70. The sealing substrate 70 has a function to protectthe organic EL elements 30 which are arranged in the display area E frombeing damaged, and is widely provided instead of the display area E. Theresin layer 71 has a function to cause the element substrate 10 toadhere to the sealing substrate 70, and, for example, an epoxy resin, anacrylic resin, or the like can be used as the resin layer 71.

The element substrate 10 includes the pixel circuit (the firsttransistor 21, the second transistor 22, the third transistor 23, thestorage capacitor 24, and the organic EL element 30), a sealing layer40, a color filter 50, and the like.

Light, which is emitted from the light emitting pixel 20, passes throughthe color filter 50 and is emitted from a side of the sealing substrate70. That is, the organic EL apparatus 100 includes a top emissionstructure. Since the organic EL apparatus 100 includes the top emissionstructure, an opaque ceramic substrate or a semiconductor substrate canbe used as a base material 10 s of the element substrate 10 in additionto the transparent quartz substrate and the glass substrate. In theembodiment, a semiconductor substrate, for example, a silicon substrateis used as the base material 10 s.

The base material 10 s is provided with well sections 10 w, which areformed by injecting ions into the semiconductor substrate, and ioninjection sections 10 d that are active layers which are formed byinjecting ions, having different types from the well sections 10 w, tothe well sections 10 w. The well sections 10 w function as channels ofthe transistors 21, 22, and 23 in the light emitting pixel 20. The ioninjection sections 10 d function as the parts of the sources, thedrains, and the wirings of the transistors 21, 22, and 23 in the lightemitting pixel 20.

An insulation film 10 a is provided to cover a surface of the basematerial 10 s in which the ion injection sections 10 d and the wellsections 10 w are formed. The insulation film 10 a functions as a gateinsulation film of each of the transistors 21, 22, and 23. A gateelectrode 22 g which is formed of, for example, a conductive film, suchas polysilicon, is formed on the insulation film 10 a. The gateelectrode 22 g is arranged to face the well section 10 w which functionsas the channel of the second transistor 22. The gate electrode is formedin the same manner with regard to the first transistor 21 and the thirdtransistor 23.

A first interlayer insulation film 15 is provided to cover the gateelectrode 22 g. In the first interlayer insulation film 15, for example,contact holes, which reach the drain of the first transistor 21 and thegate electrode 22 g of the second transistor 22, are provided. Aconductive film, which coats at least the insides of the contact holesand covers a surface of the first interlayer insulation film 15, isformed. When the conductive film is patterned, wiring, which connects,for example, a drain electrode 21 d of the first transistor 21 to thegate electrode 22 g of the second transistor 22, is provided.

Subsequently, a second interlayer insulation film 16 is provided tocover the first interlayer insulation film 15 and the wirings on thefirst interlayer insulation film 15. In the second interlayer insulationfilm 16, contact holes, which reach the wirings provided on the firstinterlayer insulation film 15, are provided. A conductive film, whichcoats at least the insides of the contact holes and covers a surface ofthe second interlayer insulation film 16, is formed. When the conductivefilm is patterned, for example, a contact section, which electricallyconnects one side electrode 24 a of the storage capacitor 24 to the gateelectrode 22 g of the second transistor 22, is provided. In addition,the data line 12 is provided in the same layer as the one side electrode24 a of the storage capacitor 24. The data line 12 is connected to asource of the first transistor 21 through the relay electrode (wiring)which is not shown in FIG. 4.

Although not shown in the drawing, a dielectric layer, which covers atleast the one side electrode 24 a of the storage capacitor 24, isprovided. In addition, the other side electrode 24 b of the storagecapacitor 24 is provided to face the one side electrode 24 a of thestorage capacitor 24 while interposing the dielectric layertherebetween. Therefore, the storage capacitor 24 is formed by the pairof electrodes 24 a and 24 b and the dielectric layer.

A third interlayer insulation film 17 is provided to cover the storagecapacitor 24. In the third interlayer insulation film 17, for example,the other side electrode 24 b of the storage capacitor 24 and contactholes, which reach wirings formed on the second interlayer insulationfilm 16, are provided. A conductive film, which coats at least theinsides of the contact holes and covers a surface of the thirdinterlayer insulation film 17, is formed. When the conductive film ispatterned, a power line 14, a relay electrode 14 c (refer to FIG. 5),and the like are provided. In the embodiment, the power line 14 and therelay electrode 14 c are formed of a conductive material which includesboth light reflexivity and conductivity, for example, aluminum, aluminumalloy, or the like. The film thickness of the power line 14 and therelay electrode 14 c is approximately 100 nm.

The power line 14 is provided on approximately the whole surface of thedisplay area E, and includes openings for the respective light emittingpixels 20B, 20G, and 20R. Relay electrodes 14 c are provided in theopenings of the power line 14. The power line 14 is arranged on theupper side of the transistors 21, 22, and 23 to face the pixel electrode31. Light which is emitted from the light emission area (openings 29B,29G, and 29R) is reflected in the power line 14.

The power line 14 is an example of a “light reflection layer” in theinvention.

Meanwhile, the light reflection layer which reflects light emitted fromthe light emission area (openings 29B, 29G, and 29R) may be configuredto be provided in an island shape for each pixel electrode 31.

A first insulation film 25, a second insulation film 26, and a thirdinsulation film 27 are sequentially laminated onto the power line 14.The first insulation film 25, the second insulation film 26, and thethird insulation film 27 are formed of an insulation material which hasthe optical transparency. In the embodiment, the first insulation film25 is formed of silicon nitride, and the second insulation film 26 andthe third insulation film 27 are formed of silicon oxide. The filmthickness of the first insulation film 25 is approximately 50 nm. Thefilm thickness of the second insulation film 26 and the third insulationfilm 27 is approximately 60 nm to 70 nm.

The first insulation film 25 is provided for the light emitting pixel20B in which blue color (B) light emission is acquired, the lightemitting pixel 20G in which green color (G) light emission is acquired,and the light emitting pixel 20R in which red color (R) light emissionis acquired. The second insulation film 26 is provided for the lightemitting pixel 20G in which green color (G) light emission is acquiredand the light emitting pixel 20R in which red color (R) light emissionis acquired. The third insulation film 27 is provided for the lightemitting pixel 20R in which red color (R) light emission is acquired.

The first insulation layer 28 includes the first insulation film 25, thesecond insulation film 26, and the third insulation film 27.

More specifically, the first insulation layer 28 of the light emittingpixel 20B in which blue color (B) light emission is acquired includesthe first insulation film 25 and has a film thickness Bd1. Further, inthe light emitting pixel 20B, the first insulation layer 28, which hasthe film thickness Bd1, is provided to reach the contact area from theopening 29B (light emission area) except the contact area in which therelay electrode 106B is connected to the pixel electrode 31B. Inaddition, the first insulation layer 28, which has the film thicknessBd1, is provided over the plurality of light emitting pixels 20B whichare arranged in the Y direction. In addition, in other words, aplurality of openings 29B (light emission area), which are arranged inthe Y direction, are provided in the first area 28B. In addition, acontact area, which connects the relay electrode 106B to the pixelelectrode 31B, is provided in the first area 28B. As shown in FIG. 5, inthe contact area, the pixel electrode 31B is directly connected to therelay electrode 106B.

The first insulation layer 28 of the light emitting pixel 20G, in whichgreen color (G) light emission is acquired, includes the firstinsulation film 25 and the second insulation film 26, and has a filmthickness Gd1. Further, in the light emitting pixel 20G, the firstinsulation layer 28 which has the film thickness Gd1 is provided toreach the contact area from the opening 29G (light emission area) exceptthe contact area in which the relay electrode 106G is connected to thepixel electrode 31G. The first insulation layer 28, which has the filmthickness Gd1, is provided over the plurality of light emitting pixels20G which are arranged in the Y direction. In addition, in other words,a plurality of openings 29G (light emission area), which are arranged inthe Y direction, are provided in the second area 28G. In addition, acontact area, in which the relay electrode 106G is connected to thepixel electrode 31G, is provided in the second area 28G. As shown inFIG. 5, the pixel electrode 31G is connected to the relay electrode 106Gthrough a contact hole 28CT1 in the contact area.

The first insulation layer 28 of the light emitting pixel 20R, in whichred color (R) light emission is acquired, includes the first insulationfilm 25, the second insulation film 26, and the third insulation film27, and has a film thickness Rd1. Further, in the light emitting pixel20R, the first insulation layer 28, which has the film thickness Rd1, isprovided to reach the contact area from the opening 29R (light emissionarea) except the contact area in which the relay electrode 106R isconnected to the pixel electrode 31R. The first insulation layer 28,which has the film thickness Rd1, is provided over the plurality oflight emitting pixels 20R which are arranged in the Y direction. Inaddition, in other words, in the third area 28R, the plurality ofopenings 29R (light emission area) which are arranged in the Y directionare arranged. A contact area, in which the relay electrode 106R isconnected to the pixel electrode 31R, is provided in the third area 28R.As shown in FIG. 5, the pixel electrode 31R is connected to the relayelectrode 106R through a contact hole 28CT2 in the contact area.

Therefore, thickness becomes larger in the order of the first insulationlayer 28 (film thickness Bd1) of the light emitting pixel 20B, the firstinsulation layer 28 (film thickness Gd1) of the light emitting pixel20G, and the first insulation layer 28 (film thickness Rd1) of the lightemitting pixel 20R.

In other words, the first insulation layer 28 which includes the firstinsulation film 25, that is, the first insulation layer 28 in the areain which the light emitting pixel 20B is arranged corresponds to thefirst area 28B. The first insulation layer 28 which includes the firstinsulation film 25 and the second insulation film 26, that is, the firstinsulation layer 28 in the area in which the light emitting pixel 20G isarranged corresponds to the second area 28G. The first insulation layer28 which includes the first insulation film 25, the second insulationfilm 26, and the third insulation film 27, that is, the first insulationlayer 28 in the area in which the light emitting pixel 20R is arrangedcorresponds to the third area 28R.

Meanwhile, the film thickness Bd1 is an example of a “first layerthickness” in the invention. The film thickness Gd1 is an example of a“second layer thickness” in the invention. The film thickness Rd1 is anexample of a “third layer thickness” in the invention.

The pixel electrode 31 is provided in an island shape on the firstinsulation layer 28, and faces the power line 14 while interposing thefirst insulation layer 28 therebetween. More specifically, the pixelelectrode 31B is provided in an island shape on the first insulationlayer 28 which has the film thickness Bd1, the pixel electrode 31G isprovided in an island shape on the first insulation layer 28 which hasthe film thickness Gd1, and the pixel electrode 31R is provided in anisland shape on the first insulation layer 28 which has the filmthickness Rd1. The pixel electrode 31 is an electrode which has opticaltransparency, which is formed of, for example, an optically transparentmaterial, such as Indium Tin Oxide (ITO), and which supplies holes inthe light emission functional layer 32. The film thickness of the pixelelectrode 31 is approximately 100 nm.

The second insulation layer 29 is provided to cover the peripheralsection of the pixel electrode 31. The second insulation layer 29 isformed of, for example, silicon oxide, and insulates each of the pixelelectrodes 31R, 31G, and 31B. The film thickness of the secondinsulation layer 29 is approximately 60 nm. The openings 29B, 29G, and29R are provided in the second insulation layer 29. The area in whichthe openings 29B, 29G, and 29R are provided is the light emission areaof the light emitting pixel 20. Meanwhile, the second insulation layer29 may be formed using an organic material, for example, an acrylicphotosensitive resin.

The light emission functional layer 32, the facing electrode 33, and thesealing layer 40 are sequentially laminated to cover the pixel electrode31 and the second insulation layer 29.

The light emission functional layer 32 includes a hole injection layer,a hole transport layer, an organic light emitting layer, an electrontransport layer, and the like which are sequentially laminated from aside of the pixel electrode 31. Holes which are supplied from the pixelelectrode 31 are coupled to electrons which are supplied from the facingelectrode 33 in the organic light emitting layer, and the light emissionfunctional layer 32 emits light. A film thickness of the light emissionfunctional layer 32 is approximately 110 nm.

The organic light emitting layer emits light which has light componentsof a red color, a green color, and a blue color. The organic lightemitting layer may include a single layer or may include a plurality oflayers (for example, a blue color light emitting layer which mainlyemits light with blue color when current flows, and a yellow color lightemitting layer which emits light having red color and green color whencurrent flows).

The facing electrode 33 is a common electrode which supplies electronsto the light emission functional layer 32. The facing electrode 33 isprovided to cover the light emission functional layer 32, is formed of,for example, an alloy of Mg and Ag, and the like, and has opticaltransparency and light reflexivity. A film thickness of the facingelectrode 33 is approximately 10 nm to 30 nm. When the material (thealloy of Mg and Ag, and the like) which forms the facing electrode 33 isthinned, it is possible to realize a function of optical transparency inaddition to a function of light reflexivity.

The sealing layer 40 is arranged on the facing electrode 33. The sealinglayer 40 is a passivation film which suppresses the deterioration of thelight emission functional layer 32 and the facing electrode 33, andsuppresses the invasion of moisture or oxygen onto the light emissionfunctional layer 32 and the facing electrode 33. Sealing layer 40includes a first sealing layer 41, a buffer layer 42, and a secondsealing layer 43 which are sequentially laminated from a side of thefacing electrode 33, cover the organic EL element 30 (display area E),and are provided on approximately the whole surface of the elementsubstrate 10. Meanwhile, in the sealing layer 40, openings (not shown inthe drawing) for exposing the external connection terminals 103 (referto FIG. 1) are provided.

The first sealing layer 41 is formed of silicon oxynitride which isformed using, for example, a plasma Chemical Vapor Deposition (CVD)method in the well-known technique, and has a high barrier property withregard to moisture and oxygen. A film thickness of the first sealinglayer 41 is approximately 200 nm to 400 nm. In addition to theabove-described silicon oxynitride, metallic oxide, such as siliconoxide, silicon nitride, titanium oxide, can be used as a material toform the first sealing layer 41.

The buffer layer 42 is formed of, for example, an epoxy-based resin, acoating-type inorganic material (silicon oxide or the like), or the likewhich is excellent in thermal stability. A film thickness of the bufferlayer 42 is thicker than the film thickness of the first sealing layer41, that is, approximately 1000 nm to 5000 nm. The buffer layer 42 coatsthe defects of the first sealing layer (pin holes or cracks), foreignsubstances, and the like, and a surface of the side of the secondsealing layer 43 in the buffer layer 42 is formed with a plane surfacecompared to a surface of the side of the facing electrode 33.

The second sealing layer 43 is formed of silicon oxynitride which isformed using, for example, a plasma CVD method according to thewell-known technique. A film thickness of the second sealing layer 43 isapproximately 300 nm to 700 nm. The second sealing layer 43 is formed ofthe same material as the first sealing layer 41, and has a high barrierproperty with regard to moisture or oxygen.

Coloration layers 50B, 50G, and 50R corresponding to the light emittingpixels 20B, 20G, and 20R are provided on the sealing layer 40. In otherwords, a color filter 50, which includes the coloration layers 50B, 50G,and 50R, is formed on the sealing layer 40. Here, the color filter 50 isprovided while being laminated onto the sealing layer 40.

Subsequently, a cross-sectional structure of a portion (contact section)in which the pixel electrode 31 is electrically connected to the thirdtransistor 23 will be described with reference to FIG. 5.

As shown in FIG. 5, the ion injection section 10 d, which functions asthe source of the third transistor 23 is provided in the base material10 s. The ion injection section 10 d (base material 10 s) is covered bythe insulation film 10 a and the first interlayer insulation film 15. Inthe first interlayer insulation film 15 and the insulation film 10 a,the contact hole which reaches the ion injection section 10 d of thethird transistor 23 is provided. A conductive film, which coats at leastthe inside of the contact hole and covers a surface of the firstinterlayer insulation film 15, is formed. When the conductive film ispatterned, the source electrode 23 s of the third transistor 23 andwiring which is connected to the source electrode 23 s are provided.

The wiring which is connected to the first interlayer insulation film 15and the source electrode 23 s is covered by the second interlayerinsulation film 16. In the second interlayer insulation film 16, acontact hole which reaches the wiring connected to the source electrode23 s is provided. A conductive film, which coats at least the inside ofthe contact hole and covers a surface of the second interlayerinsulation film 16, is formed. When the conductive film is patterned,wiring is provided on the second interlayer insulation film 16. Thesecond interlayer insulation film 16 is covered by the third interlayerinsulation film 17. In the third interlayer insulation film 17, acontact hole, which reaches the wiring provided on the second interlayerinsulation film 16, is provided. A conductive film, which coats at leastthe inside of the contact hole and covers a surface of the thirdinterlayer insulation film 17, is formed. When the conductive film ispatterned, the power line 14 and the relay electrode 14 c are providedon the third interlayer insulation film 17.

As described above, the power line 14 is provided on approximately thewhole surface of the display area E, and includes openings for each ofthe light emitting pixels 20B, 20G, and 20R. The relay electrode 14 c isprovided in an island shape in the opening of the power line 14 withregard to each of the light emitting pixels 20B, 20G, and 20R. Inaddition, the relay electrode 14 c forms a part of the wiring whichelectrically connects the pixel electrode 31 to the third transistor 23.

The first insulation film 25 is provided to cover the power line 14 andthe relay electrode 14 c. In the first insulation film 25, a contacthole 61CT, which exposes a part of the relay electrode 14 c, isprovided. A conductive film, which coats at least the inside of thecontact hole 61CT and covers a surface of the first insulation film 25,is formed. When the conductive film is patterned, the relay electrode106 is provided on the first insulation film 25. The relay electrode 106is connected to the relay electrode 14 c through the contact hole 61CT.The relay electrode 106 forms a part of the wiring which electricallyconnects the pixel electrode 31 to the third transistor 23.

The relay electrode 106 is formed of a light shading conductivematerial, for example, titan nitride. The film thickness of the relayelectrode 106 is approximately 50 nm. The relay electrode 106 isprovided in an island shape in each of the light emitting pixels 20B,20G, and 20R to cover the opening of the power line 14 in a plane view.In other words, the relay electrode 106 is provided to prevent light,which is emitted from the light emission functional layer 32, frompassing through the opening of the power line 14 and from being incidentto each of the transistors 21, 22, and 23. That is, the relay electrode106 has a function to interrupt incident light emitted from the lightemission functional layer 32 and to suppress the transistors 21, 22, and23 from malfunctioning.

The pixel electrode 31 is provided to be superimposed on the relayelectrode 106 in the plane view. As described above, the relay electrode106B and the pixel electrode 31B are provided in the light emittingpixel 20B, the relay electrode 106G and the pixel electrode 31G areprovided in the light emitting pixel 20G, and the relay electrode 106Rand the pixel electrode 31R are provided in the light emitting pixel20R.

In the light emitting pixel 20B, the pixel electrode 31B is directlyconnected to the relay electrode 106B.

In the light emitting pixel 20G, the second insulation film 26 isprovided between the relay electrode 106G and the pixel electrode 31G.The contact hole 28CT1, which exposes a part of the relay electrode106G, is provided in the second insulation film 26. The pixel electrode31B is connected to the relay electrode 106G through the contact hole28CT1.

In the light emitting pixel 20R, the second insulation film 26 and thethird insulation film 27 are sequentially provided (laminated) from aside of the relay electrode 106R between the relay electrode 106R andthe pixel electrode 31R. In the second insulation film 26 and the thirdinsulation film 27, the contact hole 28CT2, which exposes a part of therelay electrode 106R, is provided. The pixel electrode 31R is connectedto the relay electrode 106R through the contact hole 28CT2.

Meanwhile, the contact hole 28CT1 is an example of a “first contacthole” in the invention. The contact hole 28CT2 is an example of a“second contact hole” in the invention.

In this manner, the insulation film, which is arranged between the relayelectrode 14 c and the relay electrode 106, is common (first insulationfilm 25) to each of the light emitting pixels 20B, 20G, and 20R.Further, the film thickness of the first insulation layer 28, which isprovided between the power line 14 and the pixel electrode 31, differsin each of the light emitting pixels 20B, 20G, and 20R. Morespecifically, in the light emitting pixel 20B, the first insulationlayer 28, which includes the first insulation film 25 and which has thefilm thickness Bd1, is arranged between the power line 14 and the pixelelectrode 31. In the light emitting pixel 20G, the first insulationlayer 28, which includes the first insulation film 25 and the secondinsulation film 26 and which has the film thickness Gd1, is arrangedbetween the power line 14 and the pixel electrode 31. In the lightemitting pixel 20R, the first insulation layer 28, which includes thefirst insulation film 25, the second insulation film 26, and the thirdinsulation film 27 and which has the film thickness Rd1, is arrangedbetween the power line 14 and the pixel electrode 31.

Here, in the embodiment, the first insulation film 25 is formed ofsilicon nitride, and the second insulation film 26 and the thirdinsulation film 27 are formed of silicon oxide. Further, the insulationfilm, which is arranged between the relay electrode 14 c and the relayelectrode 106, is formed of silicon nitride. Therefore, when the secondinsulation film 26 and the third insulation film 27, which are formed ofsilicon oxide, are processed, it is possible to improve a processingaccuracy for enabling an etching selection ratio with regard to thefirst insulation film 25 to be acquired, and it is possible to securelyconnect the relay electrode 14 c to the pixel electrode 31.

In the first area 28B, the pixel electrode 31B is provided on the firstinsulation layer 28 (first insulation film 25) which has the filmthickness Bd1, and the pixel electrode 31B is directly connected to therelay electrode 106B. In the second area 28G, the pixel electrode 31G isprovided on the first insulation layer 28 (the first insulation film 25and the second insulation film 26) which has the film thickness Gd1, thepixel electrode 31G is connected to the relay electrode 106G through thecontact hole 28CT1. In the third area 28R, the pixel electrode 31R isprovided on the first insulation layer 28 (the first insulation film 25,the second insulation film 26, and the third insulation film 27) whichhas the film thickness Rd1, and the pixel electrode 31R is connected tothe relay electrode 106R through the contact hole 28CT2.

The pixel electrode 31B which is provided in the first area 28B, thepixel electrode 31G which is provided in the second area 28G, and thepixel electrode 31R which is provided in the third area 28R are coveredby the second insulation layer 29. Further, the light emissionfunctional layer 32, the facing electrode 33, the sealing layer 40, andthe color filter 50 are sequentially provided (laminated) on the secondinsulation layer 29.

Subsequently, a cross-sectional structure of the light emitting pixel 20in the Y direction will be described with reference to FIGS. 6 to 8.

As shown in FIGS. 6 to 8, in the base material 10 s, the well section 10w, which is shared by the second transistor 22 and the third transistor23, is provided. In the well section 10 w, three ion injection sections10 d are provided. An ion injection section 10 d, which is positioned atthe center of the three ion injection sections 10 d, functions as thedrain 22 d (23 d) which is shared by the second transistor 22 and thethird transistor 23. An insulation film 10 a is provided to cover thewell section 10 w. Further, the gate electrodes 22 g and 23 g (the gateelectrode 22 g of the second transistor 22 and the gate electrode 23 gof the third transistor 23), which are formed of, for example, aconductive film, such as polysilicon, are provided on the insulationfilm 10 a. Each of the gate electrodes 22 g and 23 g is arranged to facea part which functions as a channel in the well section 10 w between acentral side ion injection section 10 d and a terminal side ioninjection section 10 d.

Subsequently, the gate electrode 22 g of the second transistor 22 isconnected to the one-side electrode 24 a of the storage capacitor 24,which is provided on the second interlayer insulation film 16, throughthe contact hole which passes through the first interlayer insulationfilm 15 and the second interlayer insulation film 16. The sourceelectrode 22 s of the second transistor 22 is connected to the powerline 14, which is provided on the third interlayer insulation film 17,through the contact hole which passes through the first interlayerinsulation film 15, the second interlayer insulation film 16, and thethird interlayer insulation film 17.

The gate electrode 23 g of the third transistor 23 is connected to thelighting control line 13, which is provided on the first interlayerinsulation film 15, through the contact hole which passes through thefirst interlayer insulation film 15. In addition to the lighting controlline 13, the scan line 11 is provided on the first interlayer insulationfilm 15. The scan line 11 is connected to the gate of the firsttransistor 21 through a contact hole which is not shown in FIG. 5.

The source electrode 23 s of the third transistor 23 is connected to therelay electrode 14 c, which is provided on the third interlayerinsulation film 17, through a contact hole which passes through thefirst interlayer insulation film 15, the second interlayer insulationfilm 16, and the third interlayer insulation film 17. The relayelectrode 14 c is covered by the first insulation film 25, and isconnected to the relay electrode 106, which is provided on the firstinsulation film 25, through a contact hole 25CT.

In the light emitting pixel 20R, the pixel electrode 31R is connected tothe relay electrode 106R through the contact hole 28CT2 which isprovided in the second insulation film 26 and the third insulation film27.

As shown in FIG. 6, the second insulation film 26 and the thirdinsulation film 27 are provided in the light emitting pixel 20R exceptthe contact area in which the pixel electrode 31R is connected to therelay electrode 106R through the contact hole 28CT2. The firstinsulation film 25 is provided in the light emitting pixel 20R exceptthe contact area in which the relay electrode 106R is connected to therelay electrode 14 c through the contact hole 25CT. The contact hole28CT2, the relay electrode 106R, and the contact hole 25CT are examplesof a “third connection part” in the invention. The third connection partis provided in the third area 28R (third layer thickness part). Thethird connection part is surrounded by the first insulation film 25, thesecond insulation film 26, and the third insulation film 27. Further, inthe third area 28R (the third layer thickness part), the opening 29R(the light emission area) is arranged in the Y direction. In addition,the first insulation film 25, the second insulation film 26, and thethird insulation film 27 are provided to be buried between the thirdconnection parts. Therefore, there is not a step due to the firstinsulation layer 28 between the opening 29R (light emission area) andthe contact area. Compared to a case where there is a step, it ispossible to cause a distance DY between the light emission area (opening29R) and the contact area (relay electrode 106G) to be small. In otherwords, it is possible to cause the opening 29R (light emission area) tobe close to the contact area on the right side of FIG. 6. Further, it ispossible to cause the opening 29R (light emission area) to be close tothe contact area on the left side of FIG. 6. Therefore, it is possibleto cause the opening 29R (light emission area) to be large.

In the light emitting pixel 20G, pixel electrode 31G is connected to therelay electrode 106G through the contact hole 28CT1 which is provided inthe second insulation film 26.

As shown in FIG. 7, the second insulation film 26 is provided in thelight emitting pixel 20G except a contact area in which the pixelelectrode 31G is connected to the relay electrode 106G through thecontact hole 28CT1. In addition, the first insulation film 25 isprovided in the light emitting pixel 20G other than an area in which therelay electrode 106G is connected to the relay electrode 14 c throughthe contact hole 25CT. The contact hole 28CT1, the relay electrode 106G,and the contact hole 25CT are examples of a “second connection part” anda “fourth connection part” in the invention. The second connection partand the fourth connection part are provided in the second area 28G(second layer thickness part). The second connection part and the fourthconnection part are surrounded by the first insulation film 25 and thesecond insulation film 26. Further, in the second area 28G (second layerthickness part), the openings 29G (light emission area) are arranged inthe Y direction. In addition, the first insulation film 25 and thesecond insulation film 26 are provided to be buried between the secondconnection part and the fourth connection part. Therefore, there is nota step due to the first insulation layer 28 between the openings 29G(light emission area) and the contact area. Compared to a case wherethere is a step, it is possible to cause a distance DY between the lightemission area (openings 29G) and the contact area (relay electrode 106G)to be small. In other words, it is possible to cause the openings 29G(light emission area) to be close to the contact area on the right sideof FIG. 7. Further, it is possible to cause the openings 29G (lightemission area) to be close to the contact area on the left side of FIG.7. Therefore, it is possible to cause the openings 29G (light emissionarea) to be large.

In the light emitting pixel 20B, the pixel electrode 31B is directlyconnected to the relay electrode 106B.

As shown in FIG. 8, the first insulation film 25 is provided except acontact area in which the relay electrode 106B is connected to the relayelectrode 14 c through the contact hole 25CT. The contact hole 25CT andthe relay electrode 106B are examples of a “first connection part” inthe invention. The first connection part is provided in the first area(first layer thickness part). The second connection part is surroundedby the first insulation film 25 and the second insulation film 26.Further, in the first area (first layer thickness part), the opening 29B(light emission area) is arranged in the Y direction. In addition, thefirst insulation film 25 is provided to be buried between the firstconnection parts. Therefore, there is not a step due to the firstinsulation layer 28 between the opening 29B (light emission area) andthe contact area. Compared to a case where there is a step, it ispossible to cause a distance DY between the light emission area (opening29B) and the contact area (relay electrode 106G) to be small. In otherwords, it is possible to cause the opening 29B (light emission area) tobe close to the contact area on the right side of FIG. 8. Further, it ispossible to cause the opening 29R (light emission area) to be close tothe contact area on the left side of FIG. 8. Therefore, it is possibleto cause the opening 29B (light emission area) to be large.

The second insulation layer 29, the light emission functional layer 32,the facing electrode 33, the sealing layer 40, and the color filter 50are sequentially laminated onto the pixel electrode 31.

Optical Resonance Structure

In the light emission area (openings 29B, 29G, and 29R), the power line14 which has light reflexivity, the first insulation layer 28, the pixelelectrode 31, the light emission functional layer 32, and the facingelectrode 33 which has light reflexivity and optical transparency arelaminated. According to the configuration, light, which is emitted fromthe light emission functional layer 32, is caused to reciprocate (to bereflected) between the power line 14 and the facing electrode 33, andthus light, which has a specific wavelength, is resonated. Therefore,light, which has the specific wavelength, is strengthened compared to anarea which has another wavelength, and light emitted from the organic ELelement 30. Further, light, which has the specific wavelength, isemitted as display light in a direction from the power line 14 forwardthe facing electrode 33, that is, from the sealing substrate 70. In thismanner, the organic EL apparatus 100 has the optical resonance structurewhich includes the power line 14, the first insulation layer 28, thepixel electrode 31, the light emission functional layer 32, and thefacing electrode 33, and is configured to enhance the color purity oflight which is emitted from the light emitting pixel 20 by selectivelystrengthening light, which has the specific wavelength.

Hereinafter, the outline of the optical resonance structure will bedescribed.

The first insulation layer 28 has a function to adjust an optical passlength (optical distance) between the power line 14 and the facingelectrode 33, and the resonant wavelength varies according to the filmthickness of the first insulation layer 28. More specifically, when itis assumed that an optical distance from the power line 14 to the facingelectrode 33 is D, a phase shift in reflection in the reflection layeris φL, a phase shift in reflection in the facing electrode 33 is φU, apeak wavelength of a standing wave is λ, and an integer number is m, theoptical distance D satisfies the following equation (1).

D=((2πm+φL+φU)/4π)λ  (1)

The optical distance D in the optical resonance structure of the lightemitting pixels 20B, 20G, and 20R becomes larger in the order of B, G,and R, and the optical distance D is adjusted by varying the filmthickness of the first insulation layer 28 which is arranged between thepower line 14 and the pixel electrode 31.

As shown in FIG. 6, in the light emitting pixel 20R, the firstinsulation layer 28, which is arranged between the power line 14 and thepixel electrode 31R, includes the first insulation film 25, the secondinsulation film 26, and the third insulation film 27, and has a filmthickness Rd1. As shown in FIG. 7, in the light emitting pixel 20G, thefirst insulation layer 28, which is arranged between the power line 14and the pixel electrode 31G, includes the first insulation film 25 andthe second insulation film 26, and has a film thickness Gd1. As shown inFIG. 8, in the light emitting pixel 20B, the first insulation layer 28,which is arranged between the power line 14 and the pixel electrode 31B,includes the first insulation film 25, and has a film thickness Bd1.Therefore, the film thickness of the first insulation layer 28 becomeslarger in the order of light emitting pixel 20B (film thicknessBd1)<light emitting pixel 20G (film thickness Gd1)<light emitting pixel20R (film thickness Rd1). Therefore, the optical distance D becomeslarger in the order of light emitting pixel 20B<light emitting pixel20G<light emitting pixel 20R.

More specifically, in the light emitting pixel 20R, the optical distanceD is set such that the resonant wavelength (peak wavelength which hasthe highest brightness) is 610 nm. Similarly, in the light emittingpixel 20G, the optical distance D is set such that the resonantwavelength (peak wavelength which has the highest brightness) is 540 nm.In the light emitting pixel 20B, the optical distance D is set such thatthe resonant wavelength (peak wavelength which has the highestbrightness) is 470 nm.

In order to realize the peak wavelength, if the film thickness of thefirst insulation layer 28 between the reflection layer and the facingelectrode 33 is calculated when the film thickness of the pixelelectrodes 31B, 31G, and 31R, which are formed of a transparentconductive film, such as ITO, is approximately 100 nm, the filmthickness of the light emission functional layer 32 is approximately 110nm and m=1 in Equation (1), the film thickness of the first insulationlayer 28 is 170 nm in the light emitting pixel 20R, 115 nm in the lightemitting pixel 20G, and 50 nm in the light emitting pixel 20B. That is,the film thickness of the first insulation layer 28Rd1 in the lightemitting pixel 20R (third area 28R) is approximately 170 nm, the filmthickness of the first insulation layer 28Gd1 in the light emittingpixel 20G (second area 28G) is approximately 115 nm, and the filmthickness of the first insulation layer 28Bd1 in the light emittingpixel 20B (first area 28B) is approximately 50 nm. The film thickness ofthe first insulation film 25, the second insulation film 26, and thethird insulation film 27 is adjusted such that the first insulationlayer 28 is formed.

As a result, light of red color (R) which has a peak wavelength of 610nm is emitted from the light emitting pixel 20R, light of green color(G) which has a peak wavelength of 540 nm is emitted from the lightemitting pixel 20G, and light of blue color (B) which has a peakwavelength of 470 nm is emitted from the light emitting pixel 20B.

In this manner, in the organic EL apparatus 100 according to theinvention, it is possible to enhance the color purity of light which isemitted from the light emitting pixel 20 and to provide a clear displayusing the above-described optical resonance structure.

As shown in FIG. 6, the area, in which the opening 29R is provided, isthe light emission area and the area, in which the relay electrode 106Ris provided, is the contact area in the light emitting pixel 20R. Thepixel electrode 31R is provided over the light emission area and thecontact area. Since the film thickness of the first insulation layer 28in the area, in which the pixel electrode 31R is arranged, is Rd1, theoptical distance D is also fixed. Therefore, even when the lightemission area (opening 29R) is enlarged and the distance DY between thelight emission area (opening 29R) and the contact area (relay electrode106R) is shortened, the optical distance D in the light emission area isfixed, and light of red color (R) which has a peak wavelength of 610 nmis emitted. That is, it is possible to maintain the peak wavelength oflight, which is emitted from the light emission area, and to enhance theintensity of light of red color (R).

As shown in FIG. 7, in the light emitting pixel 20G, the area, in whichthe openings 29G are provided, is the light emission area and the area,in which the relay electrode 106G is provided, is the contact area. Thepixel electrode 31G is arranged over the light emission area and thecontact area. Since the film thickness of the first insulation layer 28is Gd1 in the area in which the pixel electrode 31G is arranged, theoptical distance D is also fixed. Therefore, even when the lightemission area (openings 29G) is enlarged and the distance DY between thelight emission area (opening 29R) and the contact area (relay electrode106G) is shortened, the optical distance D in the light emission area isfixed, and light of green color (G) which has a peak wavelength of 540nm is emitted. That is, it is possible to maintain the peak wavelengthof light, which is emitted from the light emission area, and to enhancethe intensity of light of green color (G).

As shown in FIG. 8, in the light emitting pixel 20B, the area, in whichthe opening 29B is provided, is the light emission area and the area, inwhich the relay electrode 106B is provided, is the contact area. Thepixel electrode 31B is arranged over the light emission area and thecontact area. Since the film thickness of the first insulation layer 28in the area, in which the pixel electrode 31B is arranged, is Bd1, theoptical distance D is also fixed. Therefore, even when the lightemission area (opening 29B) is enlarged and the distance DY between thelight emission area (opening 29B) and the contact area (relay electrode106B) is shortened, the optical distance D in the light emission area isfixed, and light of blue color (B) which has a peak wavelength of 470 nmis emitted. That is, it is possible to maintain the peak wavelength oflight, which is emitted from the light emission area, and to enhance theintensity of light of blue color (B).

For example, in the well-known technique (JP-A-2009-134067), the opticaldistance of the light emission area is different from the opticaldistance of the contact area, thereby having a boundary of a differentoptical distance between the light emission area and the contact area.In contrast, if the light emission area is enlarged over the boundary, apart which has a different optical distance is generated in the lightemission area, light of a different peak wavelength is emitted from thelight emission area, and thus the color purity of light, which isemitted from the light emission area, is deteriorated. Therefore, in thewell-known technique, it is difficult to enlarge the light emission areaover the boundary.

In the embodiment, since the optical distance D between the lightemission area and the contact area is fixed, it is possible to enlargethe light emission area and to enhance the intensity of light, which isemitted from the light emission area, compared to the well-knowntechnique.

In this manner, in the organic EL apparatus 100 according to theembodiment, it is possible to provide a bright and clear display.

Meanwhile, as long as light emission in the light emission functionallayer 32 is not adversely affected, it is possible to enlarge the lightemission area (openings 29B, 29G, and 29R). For example, if lightemission in the light emission functional layer 32 is not adverselyaffected, the light emission area (openings 29B, 29G, and 29R) may beenlarged to be superimposed on at least a part of the contact area(relay electrodes 106B, 106G, and 106R).

Method of Manufacturing Organic EL Apparatus

Subsequently, a method of manufacturing the organic EL apparatus 100will be described with reference to FIGS. 9 to 11D. FIG. 9 is a processflowchart illustrating the method of manufacturing the organic ELapparatus. FIGS. 10A to 10D and FIGS. 11A to 11D correspond to FIG. 5and are schematic cross-sectional diagrams illustrating the states ofthe organic EL apparatus after each process shown in FIG. 9 isperformed. Meanwhile, in FIGS. 10A to 10D and 11A to 11D, pixel circuitsand wirings which are provided in the lower layer than the power line 14in the element substrate 10 are not shown in the drawings.

As shown in FIG. 9, a process to manufacture the organic EL apparatus100 includes a process to form the power line 14 as the light reflectionlayer (step S1), a process to form the first insulation film 25 (stepS2), a process to form the relay electrode 106 (step S3), a process toform the second insulation film 26 (step S4), a process to etch thesecond insulation film 26 (step S5), a process to form the thirdinsulation film 27 (step S6), a process to etch the third insulationfilm 27 (step S7), and a process to form the pixel electrode 31 (stepS8).

In step S1, as shown in FIG. 10A, aluminum, an aluminum alloy, or thelike is formed to have a film thickness of approximately 100 nm using,for example, a sputtering method, and the power line 14, which functionsas the light reflection layer, and the relay electrode 14 c are formedby patterning the aluminum, the aluminum alloy, or the like. Asdescribed above, the power line 14 is formed on approximately the wholesurface of the display area E, and becomes a current supply source whichcauses the light emission functional layer 32 to emit light and thelight reflection layer to reflect light emitted from the light emissionfunctional layer 32. The power line 14 includes the opening in the lightemitting pixel 20, and the relay electrode 14 c is provided in theopening. That is, the power line 14 is provided over the plurality oflight emitting pixels 20, and the relay electrode 14 c is provided in anisland shape in each of the plurality of light emitting pixels 20.

In step S2, as shown in FIG. 10B, silicon nitride is formed to have afilm thickness of approximately 50 nm using, for example, a plasma CVDmethod. The first insulation film 25, which includes the contact hole25CT for exposing a part of the relay electrode 14 c, is formed bypatterning the silicon nitride.

In step S3, titanium nitride is formed to have a film thickness ofapproximately 50 nm using, for example, the sputtering method, and therelay electrode 106 is formed by patterning the titanium nitride asshown in FIG. 10C. The relay electrode 106 is formed to cover theopenings of the power line 14 in a planar view, and is connected to therelay electrode 14 c through the contact hole 25CT.

In step S4, silicon oxide is formed to have a film thickness ofapproximately 60 nm to 70 nm using, for example, the plasma CVD method,and the second insulation film 26, which covers the first insulationfilm 25 and the relay electrode 106, is formed as shown in FIG. 10D.

Subsequently, in step S5, an opening C1 is formed by etching andremoving a part of the second insulation film 26 using, for example, adry etching method using fluorine containing gas, as shown in FIG. 11A.That is, the second insulation film 26 is not formed in the first area28B and the second area 28G, which correspond to the opening C1, and thesecond insulation film 26 is provided in the third area 28R in which theopening C1 is not formed. Here, the contact hole 28CT2, which exposes apart of the relay electrode 106R of the third area 28R, is formed.

Here, since the first insulation film 25 is formed of silicon nitrideand the second insulation film 26 is formed of silicon oxide, aselection ratio is present when etching is performed between the firstinsulation film 25 and the second insulation film 26. In the areascorresponding to the light emission area of the first area 28B and thesecond area 28G, the first insulation film 25 is exposed, and thus anetching speed becomes slow, and, ideally, etching stops. In addition, inthe contact area of the third area 28R, the contact hole 28CT2 is formedand the surface of the relay electrode 106R is exposed, and thus theetching speed becomes slow, and, ideally, etching stops. In the samemanner, in the contact areas with the first area 28B and the second area28G, the surfaces of the relay electrode 106B and the relay electrode106G are exposed and the first insulation film 25 is exposed in theperiphery thereof, and thus the etching speed becomes slow, and,ideally, etching stops.

Subsequently, in step S6, silicon oxide is formed to have a filmthickness of approximately 60 nm to 70 nm using, for example, the plasmaCVD method, and the third insulation film 27 is formed as shown in FIG.11B. Here, the third insulation film 27 is laminated onto the firstinsulation film 25 in the areas which correspond to the light emissionareas of the first area 28B and the second area 28G, and is laminatedonto the surfaces of the relay electrode 106B and the relay electrode106G in the contact areas with the first area 28B and the second area28G. In addition, the third insulation film 27 is laminated onto thesecond insulation film 26 in the area which corresponds to the lightemission area of the third area 28R, and is laminated onto the relayelectrode 106R and the second insulation film 26 in the contact area ofthe third area 28R. That is, the third insulation film 27 is formed inthe contact hole 28CT2 which is provided in the second insulation film26.

In step S7, an opening C2 is formed by etching and removing the siliconoxide (the third insulation film 27) in the opening C1 using, forexample, the dry etching method using fluorine containing gas, as shownin FIG. 11C. That is, the opening C2 is provided in the third insulationfilm 27. In the first insulation layer 28 of the opening C2, the firstinsulation film 25 is laminated onto the power line 14, and the firstinsulation layer 28 has the film thickness Bd1. In the first insulationlayer 28 of the opening C1 in a part in which the opening C2 is notformed, the first insulation film 25 and the second insulation film 26are laminated onto the power line 14, and the first insulation layer 28has the film thickness Gd1. Accordingly, the opening C2 becomes thefirst area 28B. In addition, in the opening C1 in a part in which theopening C2 is not formed, the first insulation film 25 and the secondinsulation film 26 are laminated onto the power line 14, and the firstinsulation film 25 and the second insulation film 26 have the filmthickness Gd1. Accordingly, the opening C1 in a part in which theopening C2 is not formed becomes the second area 28G. In the firstinsulation layer 28 of the area in which the opening C1 is not formed,the first insulation film 25, the second insulation film 26, and thethird insulation film 27 are laminated onto the power line 14, and thefirst insulation film 25, the second insulation film 26, and the thirdinsulation film 27 have the film thickness Rd1. Accordingly, the area inwhich the opening C1 is not formed becomes the third area 28R. Inaddition, the opening C1 corresponds to the first area 28B and thesecond area 28G.

In addition, in step S7, the contact hole 28CT1, which exposes a part ofthe relay electrode 106G of the second area 28G, and the contact hole28CT2, which exposes a part of the relay electrode 106R of the thirdarea 28R, are formed at the same time.

Here, since the first insulation film 25 is formed of silicon nitrideand the third insulation film 27 is formed of silicon oxide, a selectionratio is present when etching is performed between the first insulationfilm 25 and the third insulation film 27. In the area corresponding tothe light emission area of the first area 28B, the first insulation film25 is exposed, and thus an etching speed becomes slow, and, ideally,etching stops.

Since the contact hole 28CT2 is formed and the surface of the relayelectrode 106R is exposed in the contact area of the third area 28R andthe contact hole 28CT1 is formed and the surface of the relay electrode106G is exposed in the contact area of the second area 28G, thus anetching speed becomes slow, and, ideally, etching stops. In the samemanner, the surface of the relay electrode 106B is exposed and the firstinsulation film 25 is exposed in the periphery thereof in the contactarea of the first area 28B, and thus an etching speed becomes slow, and,ideally, etching stops.

In step S8, ITO is formed to have a film thickness of approximately 100nm using, for example, the sputtering method, and the pixel electrode 31is formed by patterning the ITO as shown in FIG. 11D. In the first area28B, the pixel electrode 31B which is directly connected to the relayelectrode 106B is formed. In the second area 28G, the pixel electrode31G, which is connected to the relay electrode 106G through the contacthole 28CT1, is formed. In the third area 28R, the pixel electrode 31R,which is connected to the relay electrode 106R through the contact hole28CT2, is formed.

Thereafter, a step for forming the second insulation layer 29, whichdefines the light emission area of the light emitting pixel 20, a stepfor forming the light emission functional layer 32, and a step forforming the facing electrode 33 are provided.

According to the manufacturing method, it is possible to stablymanufacture the organic EL apparatus 100 according to the embodiment.

Second Embodiment Outline of Organic EL Apparatus

FIG. 12 is a schematic cross-sectional diagram illustrating theconfiguration of an organic EL apparatus according to a secondembodiment with regard to FIG. 4, that is, a schematic cross-sectionaldiagram illustrating an area, in which the openings are provided, in thesecond insulation layer which defines a light emission area. FIG. 13 isanother schematic cross-sectional diagram illustrating the configurationof the organic EL apparatus according to the second embodiment withregard to FIG. 5, that is, a schematic cross-sectional diagramillustrating an area in which the pixel electrode is electricallyconnected to the third transistor.

Hereinafter, the outline of the organic EL apparatus 200 according tothe embodiment will be described with reference to FIGS. 12 and 13centering on the difference from the first embodiment. Meanwhile, thesame reference numerals are attached to the same components as in thefirst embodiment, and the description thereof will not be repeated.

In the organic EL apparatus 200 according to the embodiment, theconfiguration of the first insulation layer 28 is different from that ofthe first embodiment and the other configurations are the same as in thefirst embodiment.

As shown in FIG. 12, a first insulation layer 28 is an optical distanceadjustment layer which is arranged between a power line 14 as a lightreflection layer and a pixel electrode 31. The first insulation layer 28includes a first insulation film 25 and an organic insulation layer 61which are sequentially laminated onto a side of the power line 14.

The first insulation film 25 has the same configuration as in the firstembodiment, and is formed of silicon nitride which has a film thicknessof approximately 50 nm.

The organic insulation layer 61 includes a first organic insulation film61 a and a second organic insulation film 61 b, which are sequentiallylaminated from a side of the first insulation film 25. The first organicinsulation film 61 a and the second organic insulation film 61 b areformed of an acrylic resin, and have approximately the same reflectiveindex as the second insulation film 26 and the third insulation film 27(silicon oxide) in the first embodiment. Therefore, the first organicinsulation film 61 a has the same film thickness as the secondinsulation film 26, that is, the same optical distance (the product ofthe reflective index and the film thickness) as in the first embodiment.The second organic insulation film 61 b has the same film thickness asthe third insulation film 27, that is, the same optical distance (theproduct of the reflective index and the film thickness) as in the firstembodiment. More specifically, each of the film thicknesses of the firstorganic insulation film 61 a and the second organic insulation film 61 bis approximately 60 nm to 70 nm.

The first organic insulation film 61 a and the second organic insulationfilm 61 b may be a resin which has optical transparency. In addition tothe above-described acrylic resin, it is possible to use polyester, amethacrylic resin, methacrylic acid-maleic acid copolymer, polystyrene,a transparent fluorine resin, polyimide, fluorinated polyimide,polyamide, polyamide imide, polyether imide, cellulose acylate,polyurethane, polyetheretherketone, polycarbonate, alicyclicpolyolefine, polyarylate, polyethersulfone, polysulfone, fluorenering-modified polycarbonate, alicyclic-modified polycarbonate, fluorenering-modified polyester, acryloyl compound, polysiloxane, or anotherorganic silicon compound.

When the reflective indexes of the first organic insulation film 61 aand the second organic insulation film 61 b are different from thereflective indexes of the second insulation film 26 and the thirdinsulation film 27 according to the first embodiment, it is necessary toadjust the film thickness of the first organic insulation film 61 a andthe second organic insulation film 61 b such that the optical distanceis approximately the same as the optical distance between the secondinsulation film 26 and the third insulation film 27 according to thefirst embodiment.

The organic insulation layer 61 includes a part 62 in which the firstorganic insulation film 61 a is arranged, and a part 63 in which thefirst organic insulation film 61 a and the second organic insulationfilm 61 b are arranged (laminated). The first insulation layer 28 of thelight emitting pixel 20B, that is, the first insulation layer 28 of thefirst area 28B includes the first insulation film 25 and has a filmthickness Bd1 (approximately 50 nm). The first insulation layer 28 ofthe light emitting pixel 20G, that is, the first insulation layer 28 ofthe second area 28G includes the first insulation film 25 and the firstorganic insulation film 61 a (the organic insulation layer 61 of thepart 62 in which the first organic insulation film 61 a is arranged),and has a film thickness Gd1 (approximately 115 nm). The firstinsulation layer 28 of the light emitting pixel 20R, that is, the firstinsulation layer 28 of the third area 28R includes the first insulationfilm 25, the first organic insulation film 61 a, and the second organicinsulation film 61 b (the organic insulation layer 61 of the part 63 inwhich the first organic insulation film 61 a and the second organicinsulation film 61 b are arranged), and has a film thickness Rd1(approximately 170 nm). In this manner, the part 62, in which the firstorganic insulation film 61 a is arranged, corresponds to the second area28G. The part 63, in which the first organic insulation film 61 a andthe second organic insulation film 61 b are arranged, corresponds to thethird area 28R.

The part 62, in which the first organic insulation film 61 a isarranged, is an example of a “first flat section” in the invention, and,hereinafter, is referred to as a first flat section 62. The part 63, inwhich the first organic insulation film 61 a and the second organicinsulation film 61 b are arranged, is an example of a “second flatsection” in the invention, and, hereinafter, is referred to as a secondflat section 63.

According to the configuration, it is possible to cause light, which isemitted from the light emission functional layer 32, to reciprocatebetween the power line 14 and the facing electrode 33, to resonate(amplify) light, which has the specific wavelength, and emits light,which has the specific wavelength, as display light from the sealingsubstrate 70. As a result, light of red color (R) which has a peakwavelength of 610 nm is emitted from the light emitting pixel 20R, lightof green color (G) which has a peak wavelength of 540 nm is emitted fromthe light emitting pixel 20G, and light of blue color (B) which has apeak wavelength of 470 nm is emitted from the light emitting pixel 20B.

Outline of Contact Section

Subsequently, the outline of a part (contact section), in which thepixel electrode 31 is electrically connected to the third transistor 23,will be described with reference to FIG. 13.

As shown in FIG. 13, in the light emitting pixel 20B, the pixelelectrode 31B is directly connected to the relay electrode 106B, and theconfiguration is the same as in the first embodiment.

In the light emitting pixel 20G, the first organic insulation film 61 a(the organic insulation layer 61 of the first flat section 62) isprovided between the relay electrode 106G and the pixel electrode 31G.In the first organic insulation film 61 a, the contact hole 28CT1, whichexposes a part of the relay electrode 106G, is provided. The pixelelectrode 31G is connected to the relay electrode 106G through thecontact hole 28CT1.

In the light emitting pixel 20R, the first organic insulation film 61 aand the second organic insulation film 61 b (the organic insulationlayer 61 of the second flat section 63) are provided between the relayelectrode 106R and the pixel electrode 31R. In the first organicinsulation film 61 a and the second organic insulation film 61 b, thecontact hole 28CT2, which exposes a part of the relay electrode 106R, isprovided. The pixel electrode 31R is connected to the relay electrode106R through the contact hole 28CT2.

In the embodiment, since the film thickness of the first insulationlayer 28, which is an optical distance adjustment layer, is fixed ineach of the light emitting pixels 20B, 20G, and 20R, it is possible toacquire the same advantage as in the first embodiment, in which it ispossible to enlarge the light emission area (openings 29B, 29G, and29R), compared to the well-known technique (JP-A-2009-134067).

Method of Manufacturing Organic EL Apparatus

Subsequently, a method of manufacturing the organic EL apparatus 200will be described with reference to FIGS. 14 to 16C. FIG. 14 is aprocess flowchart illustrating the method of manufacturing the organicEL apparatus. FIGS. 15A to 16C are schematic cross-sectional diagramsillustrating the states of the organic EL apparatus after each processshown in FIG. 14 is performed with regard to FIGS. 10 and 11.

As shown in FIG. 14, a process to manufacture the organic EL apparatus200 includes a process to form the power line 14 as the light reflectionlayer (step S11), a process to form the first insulation film 25 (stepS12), a process to form the relay electrode 106 (step S13), a process toform the first organic insulation film 61 a (step S14), a process toform the second organic insulation film 61 b (step S15), and a processto form the pixel electrode 31 (step S16).

Meanwhile, step S11 is the same as step S1 according to the firstembodiment, step S12 is the same as step S2 according to the firstembodiment, step S13 is the same as step S3 according to the firstembodiment, and step S16 is the same as step S9 according to the firstembodiment.

In step S11, the power line 14 and the relay electrode 14 c are formedas shown in FIG. 15A.

In step S12, the first insulation film 25, which includes the contacthole 25CT for exposing a part of the relay electrode 14 c, is formed asshown in FIG. 15B.

In step S13, the relay electrode 106 is formed to be superimposed on therelay electrode 14 c in a plane view as shown in FIG. 15C.

In step S14, the first organic insulation film 61 a, which covers thefirst insulation film 25 and the relay electrode 106, is formed by, forexample, coating a photosensitive acrylic resin and performing a thermalprocess (pre-bake), an exposure process, a development process, ahardening process, and the like, as shown in FIG. 16A. Thephotosensitive acrylic resin is a negative type resist, and an exposedpart is hardened, and a non-exposed part is dissolved in a developer.The first organic insulation film 61 a is formed in an area 65 rangingfrom the second area 28G to the third area 28R, and includes the contacthole 28CT1 for exposing a part of the relay electrode 106G and thecontact hole 28CT2 a for exposing a part of the relay electrode 106R.

In step S15, the second organic insulation film 61 b is formed bycoating the same material (photosensitive acrylic resin) as in step S14and performing the thermal process (pre-bake), the exposure process, thedevelopment process, the hardening process, and the like, as shown inFIG. 16B. The second organic insulation film 61 b is formed on the firstorganic insulation film 61 a of the third area 28R. That is, the secondflat section 63 is formed by laminating the second organic insulationfilm 61 b on the first organic insulation film 61 a. The first organicinsulation film 61 a in a part, in which the second organic insulationfilm 61 b is not laminated, is the first flat section 62.

In addition, the second organic insulation film 61 b includes a contacthole 28CT2 b for exposing a part of the relay electrode 106R. Thecontact hole 28CT2 for exposing a part of the relay electrode 106R isformed using the contact hole 28CT2 a, which is provided in the firstorganic insulation film 61 a, and the contact hole 28CT2 b which isprovided in the second organic insulation film 61 b.

In step S16, the pixel electrode 31B, which is directly connected to therelay electrode 106B, is formed in the first area 28B, the pixelelectrode 31G, which is connected to the relay electrode 106G throughthe contact hole 28CT1, is formed in the second area 28G, and the pixelelectrode 31R, which is connected to the relay electrode 106R throughthe contact hole 28CT2, is formed in the third area 28R, as shown inFIG. 16C.

In the embodiment, since the first organic insulation film 61 a, whichcorresponds to the second insulation film 26 according to the firstembodiment, and the second organic insulation film 61 b, whichcorresponds to the third insulation film 27 according to the firstembodiment, are formed by a photolithographic process with negativeresistance (photosensitive acrylic resin), and the process to form andetch a film, which is necessary to form the second insulation film 26and the third insulation film 27 of the first embodiment, is omitted.Accordingly, compared to the first embodiment, the process tomanufacture the first insulation layer 28 is simplified, and thus it ispossible to improve the productivity of the organic EL apparatus 200 andto reduce the manufacturing cost of the organic EL apparatus 200.

Third Embodiment Electronic Equipment

FIG. 17 is a schematic diagram illustrating a head mounted display as anexample of electronic equipment.

As shown in FIG. 17, a head mounted display 1000 includes two displayunits 1001 which are provided to correspond to the right and left eyes.When an observer M mounts the head mounted display 1000 on the head likeglasses, the observer M can see letters, images, and the like which aredisplayed on the display units 1001. For example, if images aredisplayed in consideration of the parallax between the right and leftdisplay units 1001, it is possible to see and enjoy stereoscopic images.

In the display units 1001, the organic EL apparatus 100 according to thefirst embodiment or the organic EL apparatus 200 according to the secondembodiment is mounted. Since the organic EL apparatus 100 and theorganic EL apparatus 200 include the optical resonance structure, thecolor purity of light which is emitted from the light emitting pixels20B, 20G, and 20R is enhanced. Further, since the light emission area(openings 29B, 29G, and 29R) is wide in the organic EL apparatus 100 andthe organic EL apparatus 200, a bright and clear display is provided.Accordingly, it is possible to provide the head mounted display 1000with a bright and clear display.

Meanwhile, the electronic equipment in which the organic EL apparatus100 or the organic EL apparatus 200 is mounted is not limited to thehead mounted display 1000. For example, the organic EL apparatus 100 orthe organic EL apparatus 200 may be mounted on electronic equipmentwhich includes a display unit such as a head up display, an electronicviewfinder of a digital camera, a personal digital assistant, and anavigator. Further, the invention is not limited to the display unitsand the invention can be applied to a lighting system or exposureequipment.

The invention is not limited to the embodiments, and appropriatemodifications are possible without departing from the gist or the spiritof the invention which is read from the claims or the wholespecification. A light emitting device accompanying such a modificationand electronic equipment on which the light emitting device is mountedare included in the technical range of the invention.

Various modification examples may be conceivable in addition to theembodiments. Hereinafter, modification examples will be described.

FIRST MODIFICATION EXAMPLE

FIG. 18 is a schematic plane view illustrating the configuration of anorganic EL apparatus according to a first modification example. As shownin the drawing, in the organic EL apparatus 300 according to themodification example, a first area 28B, a second area 28G, and a thirdarea 28R have a rectangular shape which is extended in the X direction.In this manner, the first area 28B, the second area 28G, and the thirdarea 28R are not limited to the rectangular shape which is extended inthe Y direction (the first embodiment), and may have, for example, therectangular shape which is extended in the X direction.

Meanwhile, in the organic EL apparatus according to the firstmodification example, the Y direction is an example of a “firstdirection” in the invention, and the X direction is an example of a“second direction” in the invention. In the X direction, the lightemitting pixels 20, in which the same color light emission is acquired,are arranged. That is, the light emitting pixels 20B, in which the bluecolor (B) light emission is acquired, are arranged in the X direction,and form a rectangular shape (stripe shape). The light emitting pixels20G, in which the green color (G) light emission is acquired, arearranged in the X direction, and form a rectangular shape (stripeshape). The light emitting pixels 20R, in which the red color (R) lightemission is acquired, are arranged in the X direction, and form arectangular shape (stripe shape). In the Y direction, the light emittingpixels 20, in which different color light emission is acquired, arerepeatedly arranged in the order of B, G and R. Meanwhile, thearrangement of the light emitting pixels 20 in the Y direction may notbe in the order of B, G, and R, and may be, for example, in the order ofR, G, and B.

SECOND MODIFICATION EXAMPLE

FIG. 19 is a schematic plane view illustrating the configuration of anorganic EL apparatus according to a second modification example. Asshown in the drawing, in the organic EL apparatus 400 according to themodification example, the light emitting pixels 20G are arranged alongthe Y direction, the light emitting pixel 20B and the light emittingpixel 20R are alternately arranged along the Y direction, and thus adisplay unit P includes two light emitting pixels 20G, a single lightemitting pixel 20B, and a light emitting pixel 20R. In this manner, thedisplay unit P includes four light emitting pixels 20, and thus it ispossible to perform more intense display, compared to the case where thedisplay unit P includes three light emitting pixels 20.

The second area 28G in which the light emitting pixels 20G are arrangedhas a rectangular shape which is extended in the Y direction. The firstarea 28B has approximately the same shape as the light emitting pixel20B, and the third area 28R has the same shape as the light emittingpixel 20R. The first area 28B and the third area 28R are alternatelyarranged along the Y direction.

As described above, an area, in which the light emitting pixel 20B isarranged, is the first area 28B, an area, in which the light emittingpixel 20G is arranged, is the second area 28G, and an area, in which thelight emitting pixel 20R is arranged, is the third area 28R. Therefore,the arrangement of the first area 28B, the second area 28G, and thethird area 28R varies in correspondence to the arrangement of the lightemitting pixels 20B, 20G, and 20R.

For example, if the light emitting pixels 20B, 20G, and 20R are arrangedin a stripe shape, the first area 28B, the second area 28G, and thethird area 28R are arranged as shown in the first embodiment or thesecond embodiment (refer to FIGS. 1 and 18). For example, if the lightemitting pixels 20B, 20G, and 20R are arranged in a zigzag, the firstarea 28B, the second area 28G, and the third area 28R are also arrangedin a zigzag.

THIRD MODIFICATION EXAMPLE

The organic insulation layer 61 is not limited to include two organicinsulation films (the first organic insulation film 61 a and the secondorganic insulation film 61 b), and may include a single organicinsulation film. For example, the organic insulation layer 61 may beformed using a method of performing multi-gradation exposure, which hasa different exposure value for each area, on a positive-typephotosensitive resin using a multi-gradation exposure mask, andintegrally forming areas (the first flat section 62, the second flatsection 63, and the contact holes 28CT1 and 28CT2) of different filmthickness. It is possible to use, for example, alkali-soluble resin(novolac resin or the like), in which a sensitive material(naphthoquinone diazide substitution compound or the like) is dispersed,or the like as the positive-type photosensitive resin. Since the organicinsulation layer 61 is formed using a single organic insulation film, itis possible to enhance the productivity. In addition, the organicinsulation layer 61 may include three or more organic insulation films.

FOURTH MODIFICATION EXAMPLE

The second organic insulation film 61 a and the second organicinsulation film 61 b are not limited to be formed by thephotolithographic process with the negative resist (photosensitiveresin). For example, the second organic insulation film 61 a and thesecond organic insulation film 61 b may be formed using a printingmethod, an inkjet method, or the like. In the same manner, the organicinsulation layer 61 according to the third modification example may beformed using the printing method, the inkjet method, or the like.

FIFTH MODIFICATION EXAMPLE

The first insulation film 25 may be formed of organic material, that is,all of the first insulation layer 28 may be formed of an organicmaterial. For example, the first insulation film 25 may be formed usingthe photolithographic process in which the same organic material(photosensitive acrylic resin) as in the second embodiment is used. Whenthe material which forms the first insulation film 25 is changed fromthe inorganic material (silicon nitride) into the organic material(photosensitive acrylic resin) and patterning is performed using onlythe photolithographic process, it is possible to enhance theproductivity.

The entire disclosure of Japanese Patent Application No. 2013-175339,filed Aug. 27, 2013 is expressly incorporated by reference herein.

What is claimed is:
 1. A light emitting device comprising: a firsttransistor; an electrode having light reflexivity and lighttransparency; a first conductive film having light reflexivity, thefirst conductive film being configured to be supplied with a constantpotential; a second conductive film having light reflexivity, the secondconductive film disposed in a same layer as the first conductive film; alight emission functional layer disposed in a layer between theelectrode and the first conductive film; and a first pixel electrodedisposed in a layer between the light emission functional layer and thefirst conductive film, the first pixel electrode including: a firstlight emission region where the light emission functional layer and thefirst pixel electrode are in direct contact, the first light emissionregion being disposed where the first pixel electrode and the firstconductive film overlap in a plan view; and a first contact region wherethe second conductive film and the first pixel electrode overlap in theplan view, wherein the second conductive film electrically connectsbetween the first transistor and the first pixel electrode in the firstcontact region, and a first distance between the first conductive filmand the electrode in a thickness direction of the first conductive filmis same as a second distance between the second conductive film and theelectrode in the thickness direction.
 2. The light emitting deviceaccording to claim 1, further comprising a first insulating layerdisposed in a layer between the first conductive film and the firstpixel electrode.
 3. The light emitting device according to claim 1,further comprising a second insulating layer disposed in a layer betweenthe light emission functional layer and the first pixel electrode in thefirst contact region.
 4. The light emitting device according to claim 2,further comprising a second insulating layer disposed in a layer betweenthe light emission functional layer and the first pixel electrode in thefirst contact region.
 5. The light emitting device according to claim 1,further comprising a relay electrode disposed in a layer between thefirst pixel electrode and the second conductive film, the relayelectrode electrically connecting between the first pixel electrode andthe second conductive film.
 6. The light emitting device according toclaim 2, further comprising a relay electrode disposed in a layerbetween the first electrode and the first insulating layer, the relayelectrode electrically connecting between the first pixel electrode andthe second conductive film.
 7. The light emitting device according toclaim 3, further comprising a relay electrode disposed in a layerbetween the first pixel electrode and the second conductive film, therelay electrode electrically connecting between the first pixelelectrode and the second conductive film.
 8. The light emitting deviceaccording to claim 4, further comprising a relay electrode disposed in alayer between the first electrode and the first insulating layer, therelay electrode electrically connecting between the first pixelelectrode and the second conductive film.
 9. The light emitting deviceaccording to claim 1, further comprising: a second transistor; a thirdconductive film having light reflexivity, the third conductive filmbeing configured to be supplied with the constant potential; a fourthconductive film having light reflexivity, the fourth conductive filmdisposed in the same layer as the first conductive film; and a secondpixel electrode disposed in the layer between the light emissionfunctional layer and the third conductive film, the second pixelelectrode including: a second light emission region where the lightemission functional layer and the second pixel electrode are in directcontact, the second light emission region being disposed where thesecond pixel electrode and the third conductive film overlap in the planview; and a second contact region where the fourth conductive film andthe second pixel electrode overlap in the plan view, wherein the fourthconductive film electrically connects between the second transistor andthe second pixel electrode in the second contact region, a thirddistance between the third conductive film and the electrode in thethickness direction is same as a fourth distance between the fourthconductive film and the electrode in the thickness direction, and thethird distance is different from the first distance.